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ABSTRACT: The single-event upset response of a single-event hardened SRAM 10-transistor cell is mapped in two dimensions via carrier injection by two-photon absorption through the back (substrate) surface in a flip-chip mounted 4 Mb SRAM. Using through-wafer carrier injection, charge is deposited into the active regions of the device at well-defined locations in a reproducible manner, and the single-event upset sensitive region of the device is localized to within ±0.3 micrometers.
IEEE Transactions on Nuclear Science 01/2006; 52(6-52):2421 - 2425. DOI:10.1109/TNS.2005.860673 · 1.28 Impact Factor