Chin-Ying Chen

Publications (11)4.39 Total impact

• Article: Pulsed-magnetron-sputtered low-temperature indium tin oxide films for flat-panel display applications

  William J. Lee, Yean-Kuen Fang, Jyh-Jier Ho, Chin-Ying Chen, Rung-Ywan Tsai, Daoyang Huang, Fang C. Ho, H. W. Chou, C. C. Chen
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  ABSTRACT: In this paper, indium tin oxide (ITO) thin films were prepared by unipolar and bipolar direct current (DC)-pulsed magnetron sputtering in a mixture of argon and oxygen onto unheated glass substrates. The target of ITO with 10 wt.% tin is used. The influences of polar modes (unipolar and bipolar); output frequencies (0 to 33 kHz); and times and off times on the optical, electrical, and structural properties of ITO films are investigated. The correlations between the deposition parameters and the film properties are discussed. It is found that the resistivity with 10−3 Θ-cm and transmittance with ≥90% of amorphous ITO films can be prepared by the reactive bipolar DC-pulsed sputtering with t on − between 45 µs and 85 µs (i.e., t on − /t on + is 9–17), and t on + , t off − and t off + are constant at 5 µs, 10 µs, and 5 µs, respectively. An optimal condition, based on the polar mode and frequency of reactive-pulsed sputtering, for obtaining the high transmittance and low resistivity of ITO films is suggested.
  Journal of Electronic Materials 04/2012; 31(2):129-135. · 1.47 Impact Factor
• Article: Vertical and diurnal characterization of volatile organic compounds in ambient air in urban areas.

  Chi-Chi Lin, Chitsan Lin, Lien-Te Hsieh, Chin-Ying Chen, Jr-Ping Wang
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  ABSTRACT: More than half of the world's population lives in cities, and their populations are rapidly increasing. Information on vertical and diurnal characterizations of volatile organic compounds (VOCs) in urban areas with heavy ambient air pollution can help further understand the impact of ambient VOCs on the local urban environment. This study characterized vertical and diurnal variations in VOCs at 2, 13, 32, 58, and 111 m during four daily time periods (7:00 to 9:00 a.m., 12:00 to 2:00 p.m., 5:00 to 7:00 p.m., and 11:00 p.m. to 1:00 a.m.) at the upwind of a high-rise building in downtown, Kaohsiung City, Taiwan. The study used gas chromatography-mass spectrometry to analyze air samples collected by silica-coated canisters. The vertical distributions of ambient VOC profiles showed that VOCs tended to decrease at greater heights. However, VOC levels were found to be higher at 13 m than at ground level at midnight from 11:00 p.m. to 1:00 a.m. and higher at 32 than 13 m between 7:00 and 9:00 a.m. These observations suggest that vertical dispersion and dilution of airborne pollutants could be jointly affected by local meteorological conditions and the proximity of pollution sources. The maximum concentration of VOCs was recorded during the morning rush hours from 7:00 to 9:00 a.m., followed by rush hours from 5:00 to 7:00 p.m., hours from 12:00 to 2:00 p.m., and hours from 11:00 p.m. to 1:00 a.m., indicating that the most VOC compounds in urban air originate from traffic and transportation emissions. The benzene-toluene-ethyl benzene-xylene (BTEX) source analysis shows that BTEX at all heights were mostly associated with vehicle transportation activities on the ground.
  Journal of the Air & Waste Management Association (1995) 07/2011; 61(7):714-20. · 1.52 Impact Factor
• Conference Proceeding: Performance Evaluation on Light Efficiency of Anti-Reflection Films by a DC Ion Source Sputter System in LCD Applications

  Chin-Ying Chen, Jyh-Jier Ho, Chao-Ming Huang, William J. Lee
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  ABSTRACT: Not Available
  Nanotechnology, 2008. NANO '08. 8th IEEE Conference on; 09/2008
• Conference Proceeding: A 5.2GHz CMOS fractional-n frequency synthesizer with a MASH delta-sigma modulator

  Chin-Ying Chen, Jyh-Jier Ho, Wan-Rone Liou, R.Y. Hsiao
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  ABSTRACT: A 5-GHz CMOS fractional-N frequency synthesizer with a delta-sigma modulator is designed in this paper. The frequency dividers are composed of an injection-locked frequency divider and a programmable divider. In consideration of low power consumption, we use an injection-locked frequency divider as the first stage prescaler. The loop filter is a second-order passive filter. The delta-sigma modulator is MASH 1-1-1 architecture. The VCO exhibits a phase noise of-116dBc/Hz at 1MHz offset frequency and an output frequency ranges from 4.91GHz to 5.38GHz. TSMC 0.18-mum CMOS process is used for this frequency synthesizer design and simulation. The frequency resolution of this fractional-N frequency synthesizer is 27 KHz and the locking time is 8 mus.
  Circuits and Systems, 2008. MWSCAS 2008. 51st Midwest Symposium on; 09/2008
• Conference Proceeding: Performance evaluation of the indium zinc oxide (IZO) thin films for organic electroluminescent diode applications

  Chin-Ying Chen, Jyh-Jier Ho, R.Y. Hsiao
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  ABSTRACT: In this report, the transparent conducting indium zinc oxide (IZO) films (60-220 nm) have been grown on hardness poly-carbonate (HPC) substrate without a post deposition annealing treatment. The direct current (dc) magnetron sputtering system was employed for the film deposition. The IZO alloy target (99.99% and 95% in purity and density, respectively) is composed of 90 wt.% of ln₂O₃ and 10 wt.% of ZnO. The electrical, optical, and structural properties of these prepared films by different dc powers, such as 50 W, 80 W and 100 W, without/with the ion-assisted deposition (IAD) technique. An optimum IZO deposition condition is developed for flexible organic light-emitting device (OLED) applications. The IZO films grown at low temperature (~ 50degC) by the dc magnetron sputtering (100-W power) with the IAD technique were used to study the electroluminescence (EL) performance of OLEDs. Under a current density of 200 (mA/cm²), the developed OLED/IZO/HPC substrate shows an excellent efficiency (5 V turn-on voltage) and a luminance of 1800 (cd/m²) in average, which is better than that measured with commercial indium-tin oxide (ITO) anodes and well above the electro-optical application standard.
  Optical Fibre Technology/Australian Optical Society, 2006. ACOFT/AOS 2006. Australian Conference on; 08/2006
• Conference Proceeding: Performance evaluation of poly-sige alloy growth with gold induced lateral crystallization for infrared photo-sensor applications

  Chin-Ying Chen, Jyh-Jier Ho, R.Y. Hsiao
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  ABSTRACT: The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated by gold induced lateral crystallization (Au-ILC) technology on a-SiGe:H layer at 10-hr 350degC annealing temperature and 60-sccm hydrogen (H₂) content. By this optimal condition, the growth rate by Au induced can be as large as 15.9 mum/hr. Due to low annealing temperature treatment (les 400degC) and large growth rate, this novel technology will be a noticeable poly-SiGe:H pin IR-sensing fabrication on a conventional pre-coated indium tin oxide (ITO)-glass substrate. Under 1-muW IR-LED incident (with peak wavelength at 710 nm) and at 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/n poly-SiGe:H/i poly-SiGe:H/p poly-SiGe:H/ITO (cathode)/glass-substrate structure posses a maximum optical gain and response speed, almost 600% and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology corresponding to a traditional pin sensor can be reduced from 280 to 150 nm, thus ascertaining its good IR-sensing selectivity. These better IR-sensing performances are demonstrated again that the proposed Au-ILC technology is a candidate to the low cost IC on opto-electronic applications.
  Optical Fibre Technology/Australian Optical Society, 2006. ACOFT/AOS 2006. Australian Conference on; 08/2006
• Conference Proceeding: Performance Evaluation of Indium Zinc Oxide Thin Films for Flexible Organic Light-emitting Device Applications

  Chin-Ying Chen, Jyh-Jier Ho
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  ABSTRACT: In this report, high-quality indium zinc oxide (IZO) films (60-220 nm) were first grown on hardness poly-carbonate (HPC) substrate by ion-assisted deposition (IAD) dc magnetron sputtering without a post deposition annealing treatment. The electrical, optical, and structural properties of these films were investigated as a function of substrate temperature, oxygen pressure, and film thickness. IAD dc magnetron sputtering provides very uniform IZO films with high transparency (ges 80% in 550 nm spectrum) and low electrical resistivity (3times10^-4 Omega-cm). The Hall mobility and carrier density for a 120-nm-thick film at 100 W are 12 cm²/V-s and 2.5times10²¹ cm^-3, respectively. Atomic force microscopy measurements of the IZO films indicated that their root mean-square values (R_MS ~ 0.44-0.69 nm) are superior to that (~ 4 nm) of commercially available indium tin oxide (ITO) films deposited by sputtering. Next, IZO films grown at low temperature by IAD dc magnetron sputtering were used to study the electroluminescence (EL) performance of organic light-emitting devices (OLEDs). Under a current density of 100 (mA/cm²), the developed OLEDs show an excellent efficiency (12 V turn-on voltage) and a luminance of 1200 (cd/m²) in average, which is better than that measured with commercial ITO anodes and well above the electro-optical application standard.
  Optical Internet and Next Generation Network, 2006. COIN-NGNCON 2006. The Joint International Conference on; 08/2006
• Conference Proceeding: Performance Evaluation of Organic Electroluminescent Devices with Nitrogen Doped Electron Transporter

  Chin-Ying Chen, Jyh-Jier Ho
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  ABSTRACT: In this report, current-voltage (I/V) curves, output luminance of the OLEDs (organic light emitting diodes) with nitrogen (N₂) doped ETL (electron transport layer) have been studied in detail. Experimental results show that the turn on voltage and driving voltage of OLEDs with ETL evaporated in the optimum N₂ gas ambient pressure of 1times10^-4 torr are reduced from 3.5 V to 1 V and 7.7 V to 5.7 V, respectively. The significant improving mechanism has been illustrated comprehensively with a schematic energy diagram model.
  Optical Internet and Next Generation Network, 2006. COIN-NGNCON 2006. The Joint International Conference on; 08/2006
• Article: Ion-assisted sputtering deposition of antireflection film coating for flexible liquid-crystal display applications.

  Jyh-Jier Ho, Chin-Ying Chen, Chao-Ming Huang, William J Lee, Wan-Rone Liou, Chung-Chang Chang
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  ABSTRACT: The optical properties and surface morphologies of sputtering films both without and with use of the ion-assisted deposition (IAD) technique are investigated and compared. Optimal antireflection (AR) coating films with SiO2/Nb2O5 layers, which are grown at 80 degrees C with a 15 cm distance between target and substrate, 55 SCCM oxygen flow (SCCM denotes cubic centimeters per minute at STP), and 1250 W magnetron sputtering power with use of the IAD technique, are used to study the optical performance. By using an atomic force microscope to investigate the surface of the sputtered Nb2O5 films, we find that the films' roughness is 0.185 nm. On a flexible hardness polycarbonate (HPC) substrate with the multilayer AR films, the peak transmittances measured in the visible range are 95.89% and 93.40%, respectively, for coatings with and without use of the IAD sputtering technology. These results are better than those measured with a bare HPC substrate (91.25%) and are well above the commercial liquid-crystal display standard (90%) and flexible application.
  Applied Optics 11/2005; 44(29):6176-80. · 1.41 Impact Factor
• Article: Power Effects in Indium-Zinc Oxide Thin Films for OLEDs on Flexible Applications

  Jyh-Jier Ho, Chin-Ying Chen
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  ABSTRACT: In this paper, transparent conducting indium-zinc oxide (IZO) films have been grown on a hard polycarbonate (HPC) substrate without postdeposition annealing treatment. The electrical, optical, and structural properties of these prepared films are investigated by different dc sputtering powers, such as 50, 80, and 100 W/cm2, with/without the ion-assisted deposition (IAD) technique. An optimal IZO deposition condition is developed for flexible organic light-emitting device (OLED) applications. The IZO films grown at low temperature (∼50°C) with dc magnetron sputtering (100 W power) and the IAD technique were used to study the electroluminescence (EL) performance of the OLEDs. The EL results are better than those that are measured with commercial indium-tin oxide anodes and well above the electro-optical application standard. © 2004 The Electrochemical Society. All rights reserved.
  Journal of The Electrochemical Society. 12/2004; 152(1):G57-G61.
• Article: Optical Engineering for Sensing and Nanotechnology (ICOSN '01)

  Chin-Ying Chen, Jyh-Jier Ho, Yuen Keun Fang, Shih-Fang Chen
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  ABSTRACT: In this paper, different structures of high-speed infrared (IR) sensors based on amorphous silicon germanium and amorphous silicon hetero-structures have been successfully developed on crystalline silicon substrates. Experimental results of these developed structures exhibit a superior device performance to that of a traditional pin amorphous photo-sensor prepared on a glass substrate, especially significant improvements in the rise time from 465 (microsecond(s) ) to 195 (microsecond(s) ), and the dark current from 50 ((mu) A) to 3.3 ((mu) A) for 5 (V) reverse bias.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
  05/2001;