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ABSTRACT: In this letter, a near infrared all-silicon (all-Si) photodetector integrated into a silicon-on-insulator waveguide is demonstrated. The device is based on the internal photoemission effect through a metal/Si Schottky junction placed transversally to the optical field confined into the waveguide. The technological steps utilized to fabricate the device allow an efficiently monolithic integration with complementary metal-oxide semiconductor compatible structures. Preliminary results show a responsivity of 0.08 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behavior both in C and L band. Finally, an estimation of bandwidth for GHz range is deduced.
Applied Physics Letters 06/2010; 96(24):241112-241112-3. · 3.84 Impact Factor
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ABSTRACT: In this paper, the realization and the characterization of a resonant cavity enhanced (RCE) photodetector, completely silicon compatible and working at 1.55 μm, are reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. Taking advantage of a Cu/Si Schottky diode fed on a high reflectivity Bragg mirror, an improvement in responsivity at 1.55 μm is experimentally demonstrated.
Applied Physics Letters 06/2008; 92(25):251104-251104-3. · 3.84 Impact Factor
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ABSTRACT: In this paper, the design of a novel photodetector at 1.55 µm, working at room temperature and completely silicon compatible, is reported. The device is a resonant cavity enhanced (RCE) structure incorporating a silicon photodetector based on the internal photoemission effect. In order to quantify the performance of photodetector, quantum efficiency including the image force effect, bandwidth and dark current as a function of bias voltage is numerically calculated. A comparison among three different Schottky barrier silicon photodetectors, having as metal layers gold, silver or copper respectively, is proposed. The highest efficiency (0.2%) but also the highest dark current is obtained with metal having the lowest barrier, while for all devices, values of the order of 100 GHz and 100 MHz were obtained, respectively, for the carrier transit time limited 3 dB bandwidth and bandwidth efficiency.
Semiconductor Science and Technology 05/2008; 23(7):075001. · 1.72 Impact Factor
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ABSTRACT: In this paper, the design of a resonant cavity enhanced photodetector, working at 1.55 µm and based on silicon technology, is reported. The photon absorption is due to the internal photoemission effect over the Schottky barrier at the metal–silicon interface. The photodetector is composed of a silicon layer in between multiple layers of Si–SiO2, as a bottom mirror, and a thin Au film and dielectric coating, as a top mirror. In order to estimate the quantum efficiency, we take advantage of the analytical formulation of the internal photoemission effect (Fowler theory) and its extension for thin films, while for the optical analysis of the device, used to calculate mirror reflectivities and active layer absorptance, a numerical method based on the transfer matrix method has been implemented. Our numerical results prove a significant enhancement of the efficiency obtained at resonant wavelengths by a very thin absorbing layer.
Journal of Optics A Pure and Applied Optics 09/2006; 8(10):909. · 1.92 Impact Factor
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Journal of Luminescence 01/2006; · 2.10 Impact Factor
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ABSTRACT: In this paper we propose the design of a silicon resonant cavity enhanced Schottky photodetector based on the internal photoemission effect, working at 1.55 μm, and entirely compatible with ULSI silicon technology.
Group IV Photonics, 2005. 2nd IEEE International Conference on; 10/2005
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ABSTRACT: In this paper we propose the design of a Silicon resonant cavity enhanced Schottky photodetector based on the internal photoemission effect, working at 1.55 mu m, and entirely compatible with ULSI Silicon technology.
2005 2nd IEEE International Conference on Group IV Photonics;
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ABSTRACT: In this paper we present a general methodology for the design of resonant cavity enhanced (RCE) photodetectors based on the internal photoemission effect. In order to estimate the theoretical quantum efficiency we take advantage of the analytical formulation of the internal photoemission effect (Fowler theory), and its extension for thin films. In particular, the absorptance is numerically determined by means of an approach based on the transfer matrix method. Finally, we apply the proposed methodology to the design of a silicon RCE photodetector operating at 1.55 mu m, based on the internal photoemission effect at an Au-Si schottky barrier.
Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits;
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ABSTRACT: Silicon optical receivers, operating at the optical communication wavelengths in the 1.3-1.55 mu m range, have attracted much research effort. Unfortunately, the performance of the devices proposed in literature are poor because this wavelength range is beyond the absorption edge of silicon. In order to extend the maximum detectable wavelength, the most common approach, in the realization of Si-based detectors, is the use of silicon-germanium layers on silicon, anyway, requiring processes non compatible with standard CMOS technology. In this paper, with the aim to extend the operation of silicon-based photo-detectors up to the 1.3-1.55 pm range, an alternative approach is investigated: we propose the design of a resonant cavity enhanced Schottky photodetector based on the internal photoemission effect. The device fabrication is completely compatible with standard silicon technology.
Photonic Materials, Devices, and Applications, Pts 1 and 2;
