O. Noblanc

Publications (2)0 Total impact

• Conference Proceeding: Characterization and modeling of Al2O3 MIM capacitors: temperature and electrical field effects

  S. Becu, S. Cremer, O. Noblanc, J.-L. Autran, Delpech P
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  ABSTRACT: This paper deals with the capacitance response of metal-insulator-metal (MIM) structures with 15 nm thick Al₂O₃ as dielectric. Electrical characterizations between 100 K and 450 K have been performed to study the temperature effect on the capacitance. An original model assuming that the permanent moment of the polar molecules in the Al₂O₃ film grows linearly with temperature is exposed to explain the experimental results.
  Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European; 10/2005
• Conference Proceeding: Impact of pocket implant on MOSFET mismatch for advanced CMOS technology

  J. Mc Ginley, O. Noblanc, C. Julien, S. Parihar, K. Rochereau, R. Difrenza, P. Llinares
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  ABSTRACT: This paper deals with MOS transistors mismatch for advanced 120 nm and 90 nm CMOS technologies. In particular we demonstrate pocket implant impact on the gate contribution that becomes more and more important with the gate oxide thickness reduction. Such a phenomenon can appear as a limit for matching improvement with CMOS technologies evolution.
  Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on; 04/2004