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G de Valicourt,
A Le Liepvre,
F Vacondio,
C Simonneau,
M Lamponi,
C Jany, A Accard,
F Lelarge,
D Make,
F Poingt,
G H Duan,
J-M Fedeli,
S Messaoudene,
D Bordel,
L Lorcy,
J-C Antona,
S Bigo
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ABSTRACT: We propose and demonstrate asymmetric 10 Gbit/s upstream - 100 Gbit/s downstream per wavelength colorless WDM/TDM PON using a novel hybrid-silicon chip integrating two tunable lasers. The first laser is directly modulated in burst mode for upstream transmission over up to 25 km of standard single mode fiber and error free transmission over 4 channels across the C-band is demonstrated. The second tunable laser is successfully used as local oscillator in a coherent receiver across the C-band simultaneously operating with the presence of 80 downstream co-channels.
Optics Express 12/2012; 20(26):B552-7. · 3.59 Impact Factor
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ABSTRACT: We report the experimental implementation of a wireless transmission system with a 146-GHz carrier frequency which is generated by optical heterodyning the two modes from a monolithically integrated quantum dash dual-DFB source. The monolithic structure of the device and the inherent low noise characteristics of quantum dash gain material allow us to demonstrate the transmission of a 1 Gbps ON-OFF keyed data signal with the two wavelengths in a free-running state at 146-GHz carrier wave frequency. The tuning range of the device fully covers the W-band (75 - 110 GHz) and the F-band (90 - 140 GHz).
Optics Express 01/2012; 20(2):1769-74. · 3.59 Impact Factor
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ABSTRACT: This paper reports on recent results on passively mode-locked InAs/InP quantum-dot-based lasers. These low-dimensional structures have proved very attractive in improving most of the properties of these devices. Subpicosecond pulse generation at repetition rates up to beyond 300 GHz has readily been demonstrated. Ultranarrow RF linewidths reach record values of less than 1 kHz. Controlled optical feedback allows a further reduction of this linewidth yielding extremely low timing jitter. A comparison of single-section and standard two-section lasers is given for the first time. These performances open the way to various applications at 1.55 μm, including very high bit rate all-optical signal processing, frequency comb generation, radio over fiber, and low-noise all-optical oscillators.
IEEE Journal of Selected Topics in Quantum Electronics 11/2011; · 3.78 Impact Factor
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ABSTRACT: The tolerance to external optical feedback of p-type doped InAs/InP quantum-dash-based distributed feedback (DFB) lasers is investigated for different values of the Bragg-grating coupling coefficient. We show that p-doping of the active layer not only enhances the differential gain but also results in small values of the linewidth enhancement factor, both parameters contributing to an increased tolerance to external optical feedback. A −18 dB onset of coherence collapse is reported for antireflection-coated devices, demonstrating the compatibility of quantum-dash-based DFB lasers with isolator-free operation.
Applied Physics Letters 12/2010; 97(23):231115-231115-3. · 3.84 Impact Factor
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ABSTRACT: This work reports the optimization of the design 1.55μm QDashes directly modulated lasers. Non-amplified 10Gb/s transmission in standard single mode fibre is demonstrated from back-to-back up to 65km at constant operating conditions.
Optical Communication (ECOC), 2010 36th European Conference and Exhibition on; 10/2010
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ABSTRACT: Static and dynamic properties of InP-based Quantum Dashes of 1.55μm directly modulated lasers are reported. Using growth and design optimization, we demonstrate linewidth enhancement factor above threshold as low as 2 and decreasing with injected current. This unique chirp behavior leads to uncompensated and non-amplified SMF 10Gb/s transmissions at a constant bias current from back-to-back up to 65km. This result opens the way to the fabrication of a low cost DML for access and metro applications.
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on; 07/2010
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ABSTRACT: We present a combined theoretical and experimental analysis of InAs/InGaAsP/InP quantum dash lasers. Calculations using an 8 band k.p Hamiltonian show that electron states, due to the low effective mass and small conduction band offsets, are not confined in the dash in the case of dash-in-a-well structures and are only weakly confined in dash-in-a-barrier structures. The shape of the dashes leads to an experimentally observed enhancement of spontaneous emission (SE) and therefore of gain for light polarized along the dash long axis, with the measured SE enhancement in excellent agreement with the theoretical calculations. An analysis of the variation of the integrated spontaneous emission rate with total current and with temperature reveals that, despite the reduced dimensionality of the active region, the threshold current of these lasers, and its temperature dependence, remain dominated by Auger recombination.
IEEE Journal of Quantum Electronics 01/2010; · 1.88 Impact Factor
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S. Azouigui,
B. Dagens,
F. Lelarge,
J.-G. Provost,
D. Make,
O. Le Gouezigou, A. Accard,
A. Martinez,
K. Merghem,
F. Grillot,
O. Dehaese,
R. Piron,
S. Loualiche,
Qin Zou,
A. Ramdane
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ABSTRACT: This paper reports on the tolerance of low-dimensional InAs/InP quantum-dash- and quantum-dot-based semiconductor lasers to optical feedback in the 1.55 mum window. For this purpose, the onset of coherence collapse (CC) is experimentally determined and systematically investigated as a function of different laser parameters, such as the injection current, differential gain, temperature, and photon lifetime. It is in particular found that for both material systems the onset of CC increases with the injection current in a similar way to bulk or quantum-well-based devices. Of most importance, we experimentally show that the differential gain plays a key role in the optical feedback tolerance. It is indeed shown to determine not only the range of the onset of CC but also the dependence of this threshold both on the temperature and laser cavity length. Increasing the operating temperature from 25degC to 85degC leads to a decrease of the onset of CC by a factor of only ~3 dB, well accounted for by the variation of the differential gain in this temperature range. We find no difference in the tolerance to external reflections of a truly 3-D confined quantum-dot-based laser and a quantum dash device of the same cavity length, which have similar differential gains. A tentative analysis of our data is finally carried out, based on existing models.
IEEE Journal of Selected Topics in Quantum Electronics 07/2009; · 3.78 Impact Factor
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F. Lelarge,
R. Brenot,
B. Rousseau,
F. Martin,
F. Poingt,
L. LeGouezigou,
O. Le Gouezigou,
F. Pommereau, A. Accard,
D. Make,
N. Chimot,
F. van-Dijk
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ABSTRACT: The effect of p-doping on both temperature and dynamic performances of 1.55mum Quantum Dashes lasers is investigated in detail. A relaxation frequency up to 13.5GHz and a damping factor as low as 0.22ns are demonstrated. The origin of this drastic improvement of the dynamic properties of Quantum Dashes lasers is discussed.
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on; 06/2009
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M. Boutillier,
O. Gauthier-Lafaye,
S. Bonnefont,
F. Lelarge,
B. Dagens,
D. Make,
O. Le Gouezigou,
B. Rousseau, A. Accard,
F. Poingt,
F. Pommereau,
F. Lozes-Dupuy
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ABSTRACT: Quantum dash lasers were irradiated for the first time, using 31-MeV protons. These novel structures, which show promising performances for 1.55 mum optical communications exhibit better robustness to radiation than quantum well lasers.
IEEE Transactions on Nuclear Science 09/2008; · 1.45 Impact Factor
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B. Dagens,
D. Make,
F. Lelarge,
B. Rousseau,
M. Calligaro,
M. Carbonnelle,
F. Pommereau, A. Accard,
F. Poingt,
L. Le Gouezigou,
C. Dernazaretian,
O. Le Gouezigou,
J.-G. Provost,
F. van Dijk,
P. Resneau,
M. Krakowski,
G.-H. Duan
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ABSTRACT: The modulation bandwidth has been identified as a specific limitation of quantum-dot or quantum-dash (QDash) lasers for direct modulation application. Solutions using tunnel injection and p-doping have already been demonstrated to increase the modulation bandwidth above 10 GHz, but with complex tunnel injection design and p-doping induced high internal losses. We show in this letter that the use of optimized QDashes and waveguide structure is sufficient to reach such high bandwidth at 1.55 mum. The device is validated by a large signal modulation demonstration at 10 Gb/s.
IEEE Photonics Technology Letters 07/2008; · 2.19 Impact Factor
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S.C. Heck,
S.B. Healy,
S. Osborne,
D.P. Williams,
R. Fehse,
E.P. O'Reilly,
F. Lelarge,
F. Poingt, A. Accard,
F. Pommereau,
O. Legouezigou,
B. Dagens
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ABSTRACT: We study 1.5 mum quantum ldquodash in a wellrdquo (DWELL) and quantum ldquodash in a barrierrdquo (DBAR) lasers. Calculations for the DWELL show a similar magnitude can be achieved for the conduction and valence band density of states over a sizeable energy range, the optimum case for a semiconductor laser. Experimental characterisation shows the room temperature threshold current remains dominated by non-radiative recombination, as previously observed for 1.55 mum quantum well lasers.
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on; 06/2008
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F. Lelarge,
R. Brenot,
B. Rousseau,
F. Martin,
F. Poingt,
L. LeGouezigou,
O. Le Gouezigou,
E. Derouin,
O. Drisse,
F. Pommereau, A. Accard,
M. Caligaro,
D. Make,
B. Dagens,
J.-G. Provost,
M. Krakowski,
F. van-Dijk,
G.H. Duan
[show abstract]
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ABSTRACT: A modulation bandwidth up to 10 GHz in continuous wave mode operation is demonstrated using optimized 1.55 mum InAs/InP (100) quantum dashes based lasers.
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on; 06/2008
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ABSTRACT: Calculations show that electron states are not confined in the dashes in 1.55 μm InAs/InP quantum dash-in-a-well laser structures. The combination of strain and three-dimensional confinement reduces the calculated density of states (DOS) near the valence band maximum, with the conduction and valence DOS then almost equal close to the band edges. Calculations and photoabsorption measurements show strongly polarized spontaneous emission and gain spectra. Experimental analysis shows the room temperature threshold current is dominated by nonradiative current paths.
Applied Physics Letters 06/2008; 92(25):251105-251105-3. · 3.84 Impact Factor
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K. Merghem,
A. Akrout,
A. Martinez,
F. Lelarge,
B. Rousseau,
F. Poingt,
L. Legouezigou,
O. Legouezigou, A. Accard,
F. Pommereau,
G.-H. Duan,
G. Aubin,
A. Ramdane
[show abstract]
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ABSTRACT: We demonstrate ~590 fs pulse generation at a 245 GHz repetition rate using a one-section Fabry-Perot quantum-dash-based laser. A time-bandwidth product of 0.41 and average output power in excess of 20 mW are achieved.
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on; 06/2008
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ABSTRACT: The tolerance to optical feedback of In As / In P quantum dash-based lasers is reported for several structures exhibiting differing values of the linewidth enhancement factor and damping factor. An analysis of the onsets of coherence collapse is carried out based on the experimental dynamic parameters extracted for each structure. It is shown that the relevant significant parameter to explain the optical feedback tolerance for this low dimensional material system is the differential gain.
Applied Physics Letters 06/2008; · 3.84 Impact Factor
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A. Ramdane,
A. Martinez,
S. Azouigui,
D.-Y. Cong,
K. Merghem,
A. Akrout,
C. Gosset,
G. Moreau,
F. Lelarge,
B. Dagens,
J.-G. Provost, A. Accard,
O. Legouezigou,
I. Krestnikov,
A. R. Kovsh,
M.Fischer
[show abstract]
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ABSTRACT: This paper presents recent progress in the field of semiconductor lasers based on self-assembled quantum dots grown either on GaAs or InP substrates. Quantum dot (QD) based lasers are attracting a lot of interest owing to their remarkable optoelectronic properties that result from the three dimensional carrier confinement. They are indeed expected to exhibit much improved performance than that of quantum well devices. Extremely low threshold currents as well as high temperature stability have readily been demonstrated in the InAs/GaAs material system. The unique properties of quantum dot based active layers such as broad optical gain spectrum, high saturation output power, ultrafast gain dynamics and low loss are also very attractive for the realization of mode-locked lasers. Recent results in the field of directly modulated InAs/GaAs lasers emitting in the 1.3 μm window are discussed. We report in particular on temperature independent linewidth enhancement factor (or Henry factor αH) up to 85°C. This is a key parameter which determines many laser dynamic properties. Optical feedback insensitive operation of specifically band-gap engineered devices, compatible with high bit rate isolator-less transmission is also reported at 1.55 μm. Monolithic mode locked lasers based on InAs/InP quantum dashes have been investigated for 1.55 μm applications. Subpicosecond pulse generation at very high repetition rates (> 100 GHz) is reported for self-pulsating one-section Fabry Perot devices. Specific applications based on these compact pulse generators including high bit rate clock recovery are discussed.
Quantum Sensing and Nanophotonic Devices; 01/2008
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S Azouigui,
B Kelleher,
S P Hegarty,
G Huyet,
B Dagens,
F Lelarge, A Accard,
D Make,
O Le Gouezigou,
K Merghem,
A Martinez,
Q Zou,
A Ramdane
[show abstract]
[hide abstract]
ABSTRACT: Optical feedback tolerance is experimentally investigated on a 600-mum-long quantum-dash based Fabry-Pérot laser emitting at 1.57mum. While quantum-dashes are structurally intermediate to quantum-wells and quantum-dots, the observed behaviour is distinctly like that of a quantum-well based laser but with greater stability. Coherence collapse and low-frequency fluctuation regimes are observed and are reported here. The onset of the coherence collapse regime is experimentally determined and is found to vary from -29 dB to -21 dB external feedback level when increasing the current from twice to nine times the threshold current.
Optics Express 11/2007; 15(21):14155-62. · 3.59 Impact Factor
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A. Shen,
J.-G. Provost,
F. Blache,
H. Gariah,
F. Mallecot,
O. Le Gouezigou, A. Accard,
F. Poingt,
L. Le Gouezigou,
F. Pommereau,
B. Rousseau,
F. Lelarge,
G.-H. Duan
[show abstract]
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ABSTRACT: We report on an actively mode-locking tunnel injection quantum dash Fabry-Perot laser diode packaged in a module at 42.7GHz, generating nearly Fourier transform limited pulses with a pulse width of 2ps over 16nm.
Optical Communication - Post-Deadline Papers (published 2008), 2007 33rd European Conference and Exhibition of; 10/2007
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B. Dagens,
D. Make,
O. Le Gouezigou,
F. Lelarge,
B. Rousseau, A. Accard,
J.-G. Provost,
F. Poingt,
J. Landreau,
O. Drisse,
E. Derouin,
F. Pommereau,
G.-H. Duan
[show abstract]
[hide abstract]
ABSTRACT: 10Gb/s transmission at 1.55micrometer up to 85 deg C is realise d with a quantum dash directly modulated laser. The bias current and current swing are unchanged during operation, demonstrating a temperature independent modulated light source.
Optical Communication (ECOC), 2007 33rd European Conference and Ehxibition of; 10/2007
