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ABSTRACT: A 140-GHz fundamental mode VCO in 90-nm CMOS and a 410-GHz push-push VCO in 45-nm CMOS, and a 125-GHz Schottky diode frequency doubler, a 50-GHz phase locked loop with a frequency doubled output at 100 GHz, a 180-GHz Schottky diode detector and a 700-GHz plasma wave detector in 130-nm CMOS have been demonstrated. Based on these, paths to terahertz CMOS circuits are suggested.
Custom Integrated Circuits Conference, 2009. CICC '09. IEEE; 10/2009
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ABSTRACT: The first mm-wave varistor mode Schottky diode frequency doubler fabricated in CMOS is demonstrated. The doubler exhibits 14 dB conversion loss, -11 dBm output power at 132 GHz and 6 GHz 3-dB output bandwidth from 128 to 134 GHz. The input matching is better than -10 dB and the rejection of fundamental signal at output is greater than 14 dB from 62 to 70 GHz.
IEEE Microwave and Wireless Components Letters 04/2009; · 1.72 Impact Factor
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ABSTRACT: Wireless interconnection within a hybrid engine controller board has been demonstrated by demodulating an AM signal transmitted with an on-chip antenna using a receiver located in the board. The receiver centered between 14 and 16 GHz uses a Schottky diode detector and should be able to support 400-Mbps data rate and ~15 cm range. The receiver does not require a crystal frequency reference. The measured peak conversion gain is ~35 dB, sensitivity over the band with minimum E<sub>b</sub>/N<sub>o</sub> of 14 dB for ASK is -58 dBm. The receiver occupies ~1.5 mm<sup>2</sup> and consumes ~60 mW.
Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE; 10/2008
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ABSTRACT: A shunt-connected complementary antiparallel diode pair (C-APDP) using n- and p-type Schottky barrier diodes (SBDs) in a 0.13-mum CMOS logic process is demonstrated. The structure eliminates the deleterious effects of parasitic capacitance to substrate and reduces the substrate resistance effects. The extrapolated cutoff frequency of C-APDP is above 470 GHz, which demonstrates the potential as a millimeter-wave frequency component. The harmonic power measurements indicate that C-APDPs can generate more than 25 dB higher third harmonic powers than n-type SBDs. The C-APDPs can be integrated with the other devices in CMOS technologies to enable generation and processing of millimeter- and submillimeter-wave signals.
IEEE Electron Device Letters 07/2008; · 2.85 Impact Factor
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Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE; 11/2007
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ABSTRACT: Utility of Schottky diodes fabricated in foundry digital 130-nm CMOS technology is demonstrated by implementing an ultra-wideband (UWB) amplitude modulation detector consisting of a low-noise amplifier (LNA), a Schottky diode rectifier, and a low-pass filter. The input and output matching of the detector is better than -10 dB from 0-10.3 GHz and 0-1.7 GHz, respectively, and almost covers the entire UWB frequency band (3.1-10.6 GHz). The measured peak conversion gain is -2.2dB. The sensitivity over the band for amplitude modulation with the minimum E <sub>b</sub>/N<sub>o</sub> of 6 dB is between -53 and -56 dBm. The power consumption is only 8.5 mW
IEEE Journal of Solid-State Circuits 06/2007; · 3.23 Impact Factor
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ABSTRACT: CoSi<sub>2</sub>-Si Schottky barrier diodes on an n-well and on a p-well/substrate are fabricated without a guard ring in a 130-nm foundry CMOS process. The nand p-type diodes with an area of 16×0.32×0.32 μm<sup>2</sup> achieve cutoff frequencies of ∼1.5 and ∼1.2 THz at 0-V bias, respectively. These are the highest cutoff frequencies for Schottky diodes fabricated in foundry silicon processes. The leakage currents at 1.0-V reverse bias vary between 0.4 to 10 nA for the n-type diodes. The break down voltage for these diodes is around 15 V. It should be possible to use these in millimeter wave and far infrared detection.
IEEE Electron Device Letters 08/2005; · 2.85 Impact Factor
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ABSTRACT: TiSi<sub>2</sub>-Si Schottky diodes for RF rectification were fabricated using a 0.18 μm CMOS process without any process modifications. These diodes are intended to be used with forward bias and small-signal amplitude. At 0 V bias, the diodes with an area of 0.45×0.45 μm<sup>2</sup> achieve a cutoff frequency of over 400 GHz. This is the highest cutoff frequency compared to that for the previously reported Schottky diodes fabricated in foundry CMOS processes. The turn-on voltage of the diodes is ∼0.30 V.
Electronics Letters 05/2005; · 0.96 Impact Factor
