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B Yang,
A Waite,
H Yin,
J Yu,
L. Black,
D. Chidambarrao,
A. Domenicucci,
X Wang,
S.H. Ku,
Y Wang, [......],
D Park,
C. Sung,
R. Wachnik,
G. Freeman,
D. Schepis,
E. Maciejewski,
M. Khare,
E. Leobandung,
S. Luning,
P. Agnello
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ABSTRACT: This paper presents for the first time (110) PMOS characteristics without R<sub>ext</sub> degradation, allowing investigation of fundamental mobility and demonstration of drive current I<sub>on</sub> in excess of 1mA/mum at I<sub>off</sub> =100 nA/mum.
Electron Devices Meeting, 2007. IEDM 2007. IEEE International; 01/2008
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D.V. Singh,
J.M. Hergenrother,
J.W. Sleight,
Z. Ren, H. Nayfeh,
O. Dokumaci,
L. Black,
D. Chidambarrao,
R. Venigalla,
J. Pan,
B.L. Tessier,
A. Nomura,
J.A. Ott,
M. Khare,
K.W. Guarini,
M. Ieong,
W. Haensch
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ABSTRACT: We have investigated for the first time the effect of stressed contact liners on the performance of fully depleted ultra-thin channel CMOS devices with a raised source/drain. Significant enhancement in mobility and drive current is observed in both nFETs and pFETs. The observed enhancement shows a strong dependence on the Si channel thickness and the height of the raised source/drain, consistent with stress simulations.
SOI Conference, 2005. Proceedings. 2005 IEEE International; 11/2005
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E.P. Gusev,
C. Cabral Jr,
B.P. Under,
Y.H. Kim,
K. Maitra,
E. Carrier, H. Nayfeh,
R. Amos,
G. Biery,
N. Bojarczuk, [......],
H. Ng,
P. Nguyen,
J. Newbury,
V. Paruchuri,
R. Rengarajan,
G. Shahidi,
A. Steegen,
M. Steen,
S. Zafar,
Y. Zhang
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ABSTRACT: The key result in this work is that FUSI/HfSi<sub>x</sub>O<sub>y</sub> gate stacks offer both significant gate leakage reduction (due to high-κ) and drive current improvement at T<sub>inv</sub> ∼ 2 nm (due to: (i) elimination of poly depletion effect, ∼ 0.5 nm, and (ii) the high mobility of HfSi<sub>x</sub>O<sub>y</sub>). We also demonstrate that threshold voltage for both PFETs and NFETs can be adjusted from midgap to the values of Vt(PFET)∼ -0.4 V and Vt(NFET) ∼ + 0.3 V by poly-Si predoping by implantation (Al or As) and FUSI alloying. Significantly improved charge trapping (V<sub>t</sub> stability) was found in the case of NiSi/ HfSi<sub>x</sub>O<sub>y</sub> compared to the same gate electrode with HfO<sub>2</sub> dielectric.
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International; 01/2005
