P. Beckage

Publications (2)0 Total impact

• Source

  Available from: emcs.org

  Conference Proceeding: Performance of super-critical strained-Si directly on insulator (SC-SSOI) CMOS based on high-performance PD-SOI technology

  A.V.Y. Thean, T. White, M. Sadaka, L. McCormick, M. Ramon, R. Mora, P. Beckage, M. Canonico, X.-D. Wang, S. Zollner, [......], C.H. Chang, Y.H. Chiu, H.C. Tuan, Y.C. See, M.S. Liang, Y.C. Sun, I. Cayrefourcq, F. Metral, M. Kennard, C. Mazure
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  ABSTRACT: This paper describes the performance of multiple-V_T, Triple-gate oxide SC-SSOI CMOS realized with Freescale's high-performance silicon-on-insulator (HiPerMOS-SOI) and SOITEC's advanced wafer-bonding technology. The thermal stability of wafer-bonded strained substrate, the beneficial impact of biaxial strain on gate-leakage and SC-SSOI enhanced SRAM bitcell operation are demonstrated for the first time. In-addition, the important scaling issues due to parasitic resistance and channel strain engineering are identified.
  VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on; 07/2005
• Conference Proceeding: Fabrication and operation of sub-50 nm strained-Si on Si1-xGex Insulator (SGOI) CMOSFETs

  M. Sadaka, A.V.-Y. Thean, A. Barr, D. Tekleab, S. Kalpat, T. White, T. Nguyen, R. Mora, P. Beckage, D. Jawarani, [......], R. Liu, M. Canonico, Q.-H. Xie, X.-D. Wang, S. Parsons, D. Eades, M. Zavala, B.-Y. Nguyen, C. Mazure, J. Mogab
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  ABSTRACT: First functional 45 nm SGOI CMOS devices on bonded SGOI substrates with T_SOI<45 nm exhibited superior short-channel control and comparable reliability to SOI devices. A 67% Gm enhancement was observed in long-channel nMOS SGOI devices, 18% drive current increase for short-channel SGOI devices, and 12% faster ring-oscillators were exhibited with respect to control SOI devices. Functional SRAM bit cells down to V_dd=0.9 V were also demonstrated.
  SOI Conference, 2004. Proceedings. 2004 IEEE International; 11/2004