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G de Valicourt,
A Le Liepvre,
F Vacondio,
C Simonneau,
M Lamponi,
C Jany,
A Accard, F Lelarge,
D Make,
F Poingt,
G H Duan,
J-M Fedeli,
S Messaoudene,
D Bordel,
L Lorcy,
J-C Antona,
S Bigo
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ABSTRACT: We propose and demonstrate asymmetric 10 Gbit/s upstream - 100 Gbit/s downstream per wavelength colorless WDM/TDM PON using a novel hybrid-silicon chip integrating two tunable lasers. The first laser is directly modulated in burst mode for upstream transmission over up to 25 km of standard single mode fiber and error free transmission over 4 channels across the C-band is demonstrated. The second tunable laser is successfully used as local oscillator in a coherent receiver across the C-band simultaneously operating with the presence of 80 downstream co-channels.
Optics Express 12/2012; 20(26):B552-7. · 3.59 Impact Factor
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ABSTRACT: We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of -9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications.
Optics Express 08/2012; 20(18):20090-5. · 3.59 Impact Factor
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R Bonk,
G Huber,
T Vallaitis,
S Koenig,
R Schmogrow,
D Hillerkuss,
R Brenot, F Lelarge,
G-H Duan,
S Sygletos,
C Koos,
W Freude,
J Leuthold
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ABSTRACT: The capability of semiconductor optical amplifiers (SOA) to amplify advanced optical modulation format signals is investigated. The input power dynamic range is studied and especially the impact of the SOA alpha factor is addressed. Our results show that the advantage of a lower alpha-factor SOA decreases for higher-order modulation formats. Experiments at 20 GBd BPSK, QPSK and 16QAM with two SOAs with different alpha factors are performed. Simulations for various modulation formats support the experimental findings.
Optics Express 04/2012; 20(9):9657-72. · 3.59 Impact Factor
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ABSTRACT: We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with Multimode Interference (MMI) couplers. This platform is suitable for active-passive, butt-joint monolithic integration with various Multiple Quantum Well (MQW) devices for narrow linewidth millimeter-wave photomixing sources. The fabricated devices achieved a high 3-dB bandwidth of up to 110 GHz and a generated output power of more than 0 dBm (1 mW) at 120 GHz with a flat frequency response over the microwave F-band (90-140 GHz).
Optics Express 04/2012; 20(8):9172-7. · 3.59 Impact Factor
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ABSTRACT: We report the experimental implementation of a wireless transmission system with a 146-GHz carrier frequency which is generated by optical heterodyning the two modes from a monolithically integrated quantum dash dual-DFB source. The monolithic structure of the device and the inherent low noise characteristics of quantum dash gain material allow us to demonstrate the transmission of a 1 Gbps ON-OFF keyed data signal with the two wavelengths in a free-running state at 146-GHz carrier wave frequency. The tuning range of the device fully covers the W-band (75 - 110 GHz) and the F-band (90 - 140 GHz).
Optics Express 01/2012; 20(2):1769-74. · 3.59 Impact Factor
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ABSTRACT: Optical spectroscopy studies have been reported on an application-relevant system emitting at 1.55 mu m and consisting of an InGaAsP injector quantum well (QW), separated by a thin InP barrier (of various thicknesses) from InAs elongated quantum dots called quantum dashes (QDash). The investigated systems constitute tunnel injection structures, whose operation principle is the transfer of carriers captured by the injector QW to the QDash layer by means of tunnelling. Numerical calculations in the eight-band kp model with a realistic dash geometry are used in order to determine the energies of confined levels and their wave functions, results of which are then verified by comparison with measured photoreflectance spectra and used to interpret spectroscopic findings. The tunnelling of carriers from QW to QDash layer is evidenced by photoluminescence excitation measurements and further supported by unusual temperature behaviour of PL peaks broadenings. Careful numerical analysis of confined states and their wave functions explains optical properties of investigated samples. The suggestions for the proper design of structures based on the injection of carriers for applications in telecom lasers are given; most importantly it is shown that care must be taken so that the QW does not significantly influence the dash emitter.
Semiconductor Science and Technology. 01/2012; 27(10).
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M Lamponi,
S Keyvaninia,
C Jany,
F Poingt, F Lelarge,
G De Valicourt,
G Roelkens,
D Van Thourhout,
S Messaoudene,
J.-M Fedeli,
G H Duan
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ABSTRACT: We report on a heterogeneously integrated InP/sil-icon-on-insulator (SOI) laser source realized through divinyl-siloxane-bis-benzocyclobutene (DVS-BCB) wafer bonding. The hybrid lasers present several new features. The III–V waveguide has a width of only 1.7 m, reducing the power consumption of the device. The silicon waveguide thickness is 400 nm, compatible with high-performance modulator designs and allowing efficient coupling to a standard 220-nm high index contrast silicon wave-guide layer. In order to make the mode coupling efficient, both the III–V waveguide and silicon waveguide are tapered, with a tip width for the III–V waveguide of around 800 nm. These new features lead to good laser performance: a lasing threshold as low as 30 mA and an output power of more than 4 mW at room temperature in continuous-wave operation regime. Continuous wave lasing up to 70 C is obtained. Index Terms—Adiabatic taper, hybrid integrated circuits, silicon laser, silicon-on-insulator (SOI) technology.
01/2012; 24(1).
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ABSTRACT: We report optical injection-locking in 21-GHz single-section and two-section InAs/InP 1.5-μm quantum-dash mode-locked lasers. Two distinct mode-locked regimes were observed and successfully locked to the optically injected light. The single-section laser only operates as a self-mode-locked laser while the two-section laser could operate as both a self-mode-locked laser and saturable-absorber dominated mode-locked laser. The continuous-wave (CW) injection-locked self-mode-locked laser shows wide tuning of the mode-locked frequency (≈270 MHz) within the locking range. The CW injection-locked saturable-absorber dominated mode-locked laser demonstrates wide optical spectrum, and 5.5 × reduction in the time-bandwidth product of the pulses. Using dual-mode injection, strong reduction of timing jitter ( ≈235 fs) is possible leading to the generation of a wide coherent frequency comb. Coherence between all the modes and the master laser is confirmed by measuring the RF beat note of each mode with a narrow linewidth laser.
IEEE Photonics Technology Letters 11/2011; · 2.19 Impact Factor
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ABSTRACT: This paper reports on recent results on passively mode-locked InAs/InP quantum-dot-based lasers. These low-dimensional structures have proved very attractive in improving most of the properties of these devices. Subpicosecond pulse generation at repetition rates up to beyond 300 GHz has readily been demonstrated. Ultranarrow RF linewidths reach record values of less than 1 kHz. Controlled optical feedback allows a further reduction of this linewidth yielding extremely low timing jitter. A comparison of single-section and standard two-section lasers is given for the first time. These performances open the way to various applications at 1.55 μm, including very high bit rate all-optical signal processing, frequency comb generation, radio over fiber, and low-noise all-optical oscillators.
IEEE Journal of Selected Topics in Quantum Electronics 11/2011; · 3.78 Impact Factor
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ABSTRACT: We report tunable harmonic mode-locking in continuous-wave (CW) optically injected InAs/InP quantum-dash lasers emitting at 1.56 μm. The frequency of generated microwave pulses is twice the laser's self-mode-locked frequency. Autocorrelation traces show Gaussian pulses with low time-bandwidth product ( ≈0.6). Mapping of the dynamics shows that this coherent microwave oscillation (MWO) region has maximum locking range ≈600 MHz (≈5 pm). Measurement of the optical linewidth of each individual mode at this regime shows strong narrowing relative to free running values by two orders of magnitude. The RF linewidth of the generated signal is ≈160 kHz confirming the coherence among the optical modes and low timing jitter.
IEEE Photonics Technology Letters 06/2011; · 2.19 Impact Factor
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Y. Ben M'Sallem,
Q.T. Le,
L. Bramerie,
Q. Nguyen,
E. Borgne,
P. Besnard,
A. Shen, F. Lelarge,
S. LaRochelle,
L.A. Rusch,
J. Simon
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ABSTRACT: We investigate wavelength tunable 56-Gb/s differential quaternary phase-shift keying (DQPSK) systems using comb generation in a quantum-dash mode-locked laser for wavelength-division-multiple access (WDM)-based broadcast application. We present relative intensity noise and bit-error-rate measurements for each mode. We demonstrate error-free operation over nine WDM channels with 100-GHz spacing.
IEEE Photonics Technology Letters 05/2011; · 2.19 Impact Factor
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F. van Dijk,
B. Charbonnier,
S. Constant,
A. Enard,
S. Fedderwitz,
S. Formont,
I.F. Lealman,
F. Lecoche, F. Lelarge,
D. Moodie,
L. Ponnampalam,
C. Renaud,
M.J. Robertson,
A.J. Seeds,
A. Stöhr,
M. Weiss
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ABSTRACT: In this paper we present the remarkable characteristics of quantum dash mode-locked lasers and how they could be used for low phase noise signal generation, for high data rate wireless transmission and radar in the millimeter wave frequency range.
IEEE Photonics Society, 2010 23rd Annual Meeting of the; 12/2010
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ABSTRACT: The tolerance to external optical feedback of p-type doped InAs/InP quantum-dash-based distributed feedback (DFB) lasers is investigated for different values of the Bragg-grating coupling coefficient. We show that p-doping of the active layer not only enhances the differential gain but also results in small values of the linewidth enhancement factor, both parameters contributing to an increased tolerance to external optical feedback. A −18 dB onset of coherence collapse is reported for antireflection-coated devices, demonstrating the compatibility of quantum-dash-based DFB lasers with isolator-free operation.
Applied Physics Letters 12/2010; 97(23):231115-231115-3. · 3.84 Impact Factor
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ABSTRACT: This work reports the optimization of the design 1.55μm QDashes directly modulated lasers. Non-amplified 10Gb/s transmission in standard single mode fibre is demonstrated from back-to-back up to 65km at constant operating conditions.
Optical Communication (ECOC), 2010 36th European Conference and Exhibition on; 10/2010
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ABSTRACT: Static and dynamic properties of InP-based Quantum Dashes of 1.55μm directly modulated lasers are reported. Using growth and design optimization, we demonstrate linewidth enhancement factor above threshold as low as 2 and decreasing with injected current. This unique chirp behavior leads to uncompensated and non-amplified SMF 10Gb/s transmissions at a constant bias current from back-to-back up to 65km. This result opens the way to the fabrication of a low cost DML for access and metro applications.
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on; 07/2010
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ABSTRACT: Experimentally we find a 10 dB input power dynamic range advantage for amplification of phase encoded signals with quantum dot SOA as compared to low-confinement bulk SOA. An analysis of amplitude and phase effects shows that this improvement can be attributed to the lower alpha-factor found in QD SOA.
Optics Express 03/2010; 18(6):6270-6. · 3.59 Impact Factor
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ABSTRACT: The potential of a quantum dash based modelocked laser to achieve a low phase noise oscillator by means of an optical self-injection loop is demonstrated. A phase noise as low as -105-dBc/Hz at an offset frequency of 100-kHz has been achieved with such a configuration.
Electronics Letters 02/2010; · 0.96 Impact Factor
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ABSTRACT: Semiconductor Optical Amplifiers (SOAs) may be designed as linear or nonlinear network elements. We report on recent results that indicate advantageous characteristics for QD SOAs as linear and bulk SOA as nonlinear network elements.
Optical Fiber Communication (OFC), collocated National Fiber Optic Engineers Conference, 2010 Conference on (OFC/NFOEC); 01/2010
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ABSTRACT: We report on comb generation at 1.55 mum using a mode-locked quantum-dash-based laser. A flat optical spectrum with a ~10-nm width consisting of eight 100-GHz-spaced channels is demonstrated. Separate error-free transmission of each channel is achieved at 10 Gb/s over 50-km-long single-mode fiber. Compared to an ideal external cavity continuous-wave laser, a penalty of only 1.5 dB is measured for each filtered channel. This is attributed to the higher relative intensity noise level of a filtered mode.
IEEE Photonics Technology Letters 01/2010; · 2.19 Impact Factor
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M Lamponi,
S Keyvaninia,
F Pommereau,
R Brenot,
G Valicourt, F Lelarge,
G Roelkens,
D Van Thourhout,
S Messaoudene,
J M Fedeli,
others
Group IV Photonics (GFP), 2010 7th IEEE International Conference on; 01/2010
