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O. Auciello,
S. Pacheco,
A.V. Sumant,
C. Gudeman,
S. Sampath,
A. Datta,
R.W. Carpick,
V.P. Adiga, P. Zurcher,
Zhenqiang Ma,
Hao-Chih Yuan,
J.A. Carlisle,
B. Kabius,
J. Hiller,
S. Srinivasan
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ABSTRACT: Next-generation military and civilian communication systems will require technologies capable of handling data/ audio, and video simultaneously while supporting multiple RF systems operating in several different frequency bands from the MHz to the GHz range [1]. RF microelectromechani-cal/nanoelectromechanical (MEMS/NEMS) devices, such as resonators and switches, are attractive to industry as they offer a means by which performance can be greatly improved for wireless applications while at the same time potentially reducing overall size and weight as well as manufacturing costs.
IEEE Microwave Magazine 01/2008; · 2.11 Impact Factor
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ABSTRACT: For the first time working MEMS resonators have been produced using low-temperature deposited (550° C) Ultrananocrystalline™ Diamond (UNCD™) films. Using a lumped-element model to fit experimental data, UNCD materials properties such as a Young's modulus of 710 GPa and an acoustic velocity of 14,243 m/s have been deduced. This is the highest acoustic velocity measured to date for a diamond MEMS structural layer deposited at low temperatures. A 10 MHz resonator shows a DC-tunability of the resonance frequency of 15% between 15 and 25 V and the breakdown voltage behavior shows electrostatic breakdown rather than electro-mechanical pull-down for higher frequency devices. Good resonant frequency reproducibility is observed when cycling the resonators over bias voltages from 15 to 25 V and over RF power levels of -10 to 10 dBm.
Microwave Conference, 2005 European; 11/2005
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[show abstract]
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ABSTRACT: For the first time working MEMS resonators have been produced using low-temperature deposited (550°C) ultrananocrystalline™ diamond (UNCD™) films. Using a lumped-element model to fit experimental data, UNCD materials properties such as a Young's modulus of 710 GPa and an acoustic velocity of 14,243 m/s have been deduced. This is the highest acoustic velocity measured to date for a diamond MEMS structural layer deposited at low temperatures. A 10 MHz resonator shows a DC-tunability of the resonance frequency of 15% between 15 and 25 V and the breakdown voltage behavior shows electrostatic breakdown rather than electro-mechanical pull-down for higher frequency devices. Good resonant frequency reproducibility is observed when cycling the resonators over bias voltages from 15 to 25 V and over RF power levels of -10 to 10 dBm.
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European; 11/2005
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ABSTRACT: CMOS back-end-of-line (BEOL) compatible MEMS resonators were fabricated via a low-temperature process flow. The exural-mode resonator beams are made of a bi-layer consisting of a thin TaN and thick SiON 1m. DC measurements of pull-down voltage indicate limitations to operating voltages due to electric field breakdown across the bottom electrode to resonator beam gap. The RF response of the resonators shows resonant frequencies in the 11.0-11.6 MHz range with Q values of 2200.
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on; 10/2004
