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ABSTRACT: Plasmonic devices are modeled and simulated by incorporating a Lorentz-Drude model for the metallic materials and a multi-level multi-electron quantum model for the semiconductor materials into Maxwell's equations. Some novel plasmonic devices such as a detector consisting of a dipole nanoantenna and a metal-semiconductor-metal detector, and a ring resonator based on a hybrid dielectric loaded waveguide are investigated with developed multiphysics modeling method. Simulation results show that the devices are very promising and can be combined with nanoelectronic integrated circuits to further improve their performance.
General Assembly and Scientific Symposium, 2011 XXXth URSI; 09/2011
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ABSTRACT: The traditional challenging problem 2000-4 of electromagnetics (as indicated by the IEEE) proposed a benchmark model of a conventional CPU with a heatsink. However, after CPU entered the multiple-die century, the original model is no longer effective for the new generation multiple-die package. A novel model is proposed in this paper for electromagnet radiation modeling of the CPU with dual dies as a new electromagnetic compatibility benchmark-modeling approach. The modeling method is validated by the measurement, and the simulation and measurement results showed a good agreement, and demonstrated it is an effective modeling technique.
IEEE Transactions on Electromagnetic Compatibility 03/2011; · 1.18 Impact Factor
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IEEE Transactions on Electromagnetic Compatibility. 01/2011; 53:91-98.
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ABSTRACT: This paper presents an EMC modelling approach for the latest dual die CPU with a heatsink from an antenna point of view. The model acts as a very efficient antenna while its structure is constructed almost according to a real dual die CPU structure. Different sizes of heatsink cooperate in the investigation of electromagnetic characterization. Simulation and measurement are accomplished in far-filed range. The results show that the dual die model without heatsink is resonating at two frequencies which are 2.04 GHz and 4.9 GHz. When a heatsink is mounted however the resonant frequencies are changed to 1.80 GHz and 5.20 GHz respectively.
Electromagnetic Compatibility (APEMC), 2010 Asia-Pacific Symposium on; 05/2010
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9th EMC Symposium & Exhibition Melbourne; 01/2010
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ABSTRACT: Due to the variety of internal structures applied in different processors, EMC modelling should also be upgraded correspondingly. This paper presents an upgraded EMC simulation model of dual die structure which is originated from the IEEE electromagnetic challenging problem 2000-4 for conventional CPU with heatsink. The simulation results are verified by measurement with a fabricated model. Furthermore, a consequent benchmark will be provided.
Electromagnetic Compatibility Symposium Adelaide, 2009.; 10/2009
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ABSTRACT: In this paper, a compact UWB bandpass filter based on broadside-coupled microstrip/CPW composition structure has been presented. The performance of the proposed filter can be optimized accordingly by varying gaps among three parallel microstrip stubs. The measured filter exhibits good in-band performance, including a low insertion loss of < 0.8 dB in the midband, a good return loss of < -9.7 dB, and a very small group delay variation of < 0.15 ns within its whole passband. In addition, the proposed UWB bandpass filter has the merit of compact size (0.309 by 0.145 guided wavelength at the center frequency of 7.2 GHz) comparing to most of the published UWB bandpass filters.
Microwave Conference, 2008. APMC 2008. Asia-Pacific; 01/2009
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The International Symposium on Electromagnetic Compatibility Kyoto; 01/2009
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ABSTRACT: This paper presents an advanced electromagnetic study of Intel Pentium dual die CPU. Leading beyond the previous work, an improved structure modelled for the novel generation of Intel Pentium dual die CPU is extracted which acts as a patch antenna with high radiation frequency. It is also figured as an upgraded structure for the IEEE challenging problem with multi-core processor on the radiative EMI. The model geometry is extracted from the data sheet of real chip with some approximation. With the help of HFSS, modelling and simulation are accomplished by means of FEM in frequency domain.
Antennas, Propagation and EM Theory, 2008. ISAPE 2008. 8th International Symposium on; 12/2008
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ABSTRACT: A novel interconnect model is used in the postlayout simulation of a broadband transimpedance amplifier. Simulation results employing the proposed model are verified by on-wafer measurement results. The impact of interconnect effects on the circuit performance is analyzed. The importance of incorporating an adequate interconnect model is demonstrated. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 3017–3020, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23878
Microwave and Optical Technology Letters 11/2008; 50(12):3017 - 3020. · 0.62 Impact Factor
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Nanotechnology, 2008. NANO '08. 8th IEEE Conference on; 09/2008
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Nanotechnology, 2008. NANO '08. 8th IEEE Conference on; 09/2008
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ABSTRACT: A model development methodology for complex shaped on-wafer interconnects is presented. The equivalent circuit of the entire interconnect is obtained by cascading basic subsegment models. The extracted parameters are formulated into empirical expressions. Thus, the proposed model can be easily incorporated with commercial electronic design automation (EDA) tools. The accuracy of the model is validated by the on-wafer measurements up to 20 GHz.
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 08/2008; · 1.22 Impact Factor
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ABSTRACT: The electromagnetic modeling of distributed or other highly complex systems requires reliable and strongly adaptable simulation algorithms. In this respect, the finite-volume time-domain (FVTD) method is a promising and very flexible approach in the class of volume-discretizing numerical techniques, because of its combination of explicit time stepping with an unstructured, inhomogeneous mesh. For scattering problems, in order to achieve accurate simulation results, a highly absorbing boundary truncation scheme is required. This paper proposes an approximate conformal perfectly matched absorber for the FVTD method and demonstrates its applicability with a practical example of the simulation of mutual coupling between two dielectric resonator antennas (DRAs).
Electromagnetic Compatibility and 19th International Zurich Symposium on Electromagnetic Compatibility, 2008. APEMC 2008. Asia-Pacific Symposium on; 06/2008
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ABSTRACT: In this paper, Carbon nanotube (CNT) Schottky diodes are investigated from the atomic perspective using the first principles DFT-NEGF method. Two atomic models are built based on experimental setting. The atomic behaviors of the CNT Schottky diodes are explored through density of states and charge transfer of the atomic models. The electron transport properties of the CNT diodes are analyzed through transmission function, energy gap shifting and I-V characteristics.
Electron Devices Meeting, 2007. IEDM 2007. IEEE International; 01/2008
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IEEE Trans. VLSI Syst. 01/2008; 16:922-926.
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ABSTRACT: Gate leakage current is becoming an important component of total leakage current in scaled metal oxide semiconductor field effect transistor (MOSFET) devices. The gate leakage current is mostly predicted by drift diffusion (DD) based simulators which do not accurately model non-linear effects such as velocity overshoot and non-equilibrium hot carrier transport in very short gate length transistors. We present a full-band Monte Carlo (MC) model that has been coupled to a Schrodinger equation solver to predict direct tunneling gate currents in a 50 nm gate length (31 nm channel length) n-type MOSFET in saturation mode, in logic on-state and logic off-state. In addition a dual-thickness gate oxide structure is proposed to reduce the gate tunneling leakage current.
Integrated Circuits, 2007. ISIC '07. International Symposium on; 10/2007
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ABSTRACT: We present the analysis of direct tunneling (DT) gate leakage current in a 25 nm channel length n-channel metal oxide semiconductor field effect transistor MOSFET using an ensemble full band Monte Carlo (FBMC) simulation which incorporates quantum effects using Schrodinger solver. The DT current is simulated and compared with quantum drift diffusion (DD) results using DESSIS. The FBMC simulations yield DT currents one order higher than DD currents. In addition a dual thickness gate oxide structure is simulated using FBMC and DD and found to be effective in reducing the DT current.
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on; 09/2007
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ABSTRACT: The electron transport properties of carbon nanotube (CNT) metal/semiconductor/metal heterostructures are investigated using the first principles method based on density functional theory (DFT) and non-equilibrium Green's function (NEGF). The atomic heterostructures are constructed by sandwiching a zigzag semiconducting CNT between two zigzag metallic CNTs with different diameters. The density of states, transmission function, conductance and current-voltage characteristics of the constructed heterostructures are simulated using the DFT-NEGF method. Results show that the imperfect interface in the CNT heterostructures affects the high-bias conductance significantly. The reduction of high-bias conductance is proportional to diameter ratio of two CNTs connected. The diameter of metallic CNT decides the threshold voltage and low-bias conductance of the heterostructures. The larger the diameter is, the lower the threshold voltage is and the higher low-bias conductance is.
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on; 09/2007
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ABSTRACT: This paper describes the development of an equivalent circuit model of on-wafer interconnects for high-speed CMOS integrated circuits. By strategically cascading two-pi blocks together, the lumped model can characterize the distributed effects. Besides, the elaborately proposed model characterizes the frequency-variant characteristics with frequency-independent components. Thus, the model can be easily plugged into commercial computer-aided design tools. By adopting a newly invented optimization algorithm, namely, particle swarm optimization (PSO), the model parameters are extracted and formulated as empirical expressions. Therein, with each set of the geometrical parameters, the interconnect behaviors can be accurately predicted. The accuracy of the model is validated by comparisons with the on-wafer measurements up to 30 GHz. Moreover, the scalability of the proposed model is also discussed
IEEE Transactions on Advanced Packaging 12/2006; · 1.12 Impact Factor
