Publications (2)2.85 Total impact
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Article: High-performance 0.1-μm In0.4AlAs/In0.35GaAs MHEMTs with Ar plasma treatment
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ABSTRACT: High-performance 0.1-μm In<sub>0.4</sub>AlAs/In<sub>0.35</sub>GaAs metamorphic high-electron mobility transistors (MHEMTs) on GaAs substrate have been successfully fabricated with Ar plasma treatment. Before the gate Schottky metallization, the devices were treated with Ar plasma, which might clean and improve the surface of exposed barrier layer. The devices fabricated with Ar plasma treatment exhibited the excellent characteristics such as 50% reduction of the reverse gate leakage currents, the improved Schottky ideality factor of 1.37, high extrinsic transconductance of 700 mS/mm, and high maximum drain current density of 780 mA/mm. And the cutoff frequency f<sub>T</sub> as high as 210 GHz was achieved. To our knowledge, this is the best reported cutoff frequency for a 0.1-μm MHEMT with an indium content of 35% in the channel.IEEE Electron Device Letters 12/2005; · 2.85 Impact Factor -
Conference Proceeding: A new two-step recess technology using SiN<sub>x</sub> passivation and Pt-buried gate process and its application to 0.15 μm Al<sub>0.6</sub>InAs/In<sub>0.65</sub>GaAs HEMTs
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ABSTRACT: A new two-step recess (TSR) technology was successfully demonstrated using SiN<sub>x</sub> passivation and Pt-buried gate process. Applying the developed two-step recess (TSR) process to the fabrication of 0.15 μm Al<sub>0.6</sub>InAs/In<sub>0.65</sub>GaAs HEMTs, remarkable improvements could be obtained such as the suppression of the kink effect, and the increase of G<sub>m,max</sub>, f<sub>T</sub> and f<sub>max</sub>. Since the side-recessed region was fully passivated by SiN<sub>x</sub> dielectric layer, this TSR technology is also to offer additional advantage of good reliability.Device Research Conference, 2004. 62nd DRC. Conference Digest [Late News Papers volume included]; 07/2004
