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Publications (2)2.32 Total impact

  • Article: Flexible substrate micro-crystalline silicon and gated amorphous silicon strain sensors
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    ABSTRACT: We present two different kinds of semiconductor strain sensors: ungated n+ micro-crystalline silicon (n+ μC-Si), and gated hydrogenated amorphous silicon (a-Si:H). Both sensor types are fabricated on flexible polyimide substrates. The sensors were characterized with bending perpendicular, parallel, and at 45° with respect to the sensor bias direction, and for several bending diameters. Sensor size and power consumption are significantly reduced compared to metallic foil strain sensors. Small sensor size and ease of integration with a-Si:H thin-film transistors also allows arrays of strain sensors or combinations of strain sensors with varying geometric orientation to allow strain direction as well as magnitude to be unambiguously determined.
    IEEE Transactions on Electron Devices 03/2006; · 2.32 Impact Factor
  • Conference Proceeding: Flexible substrate a-Si:H TFTs for space applications
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    ABSTRACT: We have fabricated hydrogenated amorphous silicon (a-Si:H) TFTs on Kapton<sup>(R)</sup> polyimide flexible substrates and characterized their response to deployment-like mechanical stresses and to radiation exposure. To maintain substrate flatness and provide improved thermal transfer during fabrication, we used a pressure-sensitive silicone gel adhesive layer to mount Kapton<sup>(R)</sup> substrates onto glass carriers. The test results, presented in this paper, are encouraging for space use of a-Si:H TFTs on polymeric substrates. Device function was retained even after 1 Mrad fast electron irradiation, and irradiation-induced device changes were removed by low-temperature thermal annealing. Although some TFTs were destroyed by substrate stressing, the majority survived with only small changes, suggesting that care in device design and placement may reduce or eliminate this problem.
    Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]; 07/2004