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ABSTRACT: We report on the strong coupling between inorganic quantum well excitons and surface plasmons. For that purpose a corrugated silver film was deposited on the top of a heterostructure consisting of GaAs/GaAlAs quantum wells. The formation of plasmon/heavy-hole exciton/light-hole exciton mixed states is demonstrated with reflectometry experiments. The interaction energies amount to 21 meV for the plasmon/light-hole exciton and 22 meV for the plasmon/heavy-hole exciton. Some particularities of the plasmon-exciton coupling were also discussed and qualitatively related to the plasmon polarization.
Phys. Rev. B. 11/2008; 78(20).
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S. Bonnefont,
B. Messant,
M. Boutillier,
O. Gauthier-Lafaye,
F. Lozes-Dupuy,
A. Martinez,
V. Sallet,
K. Merghem, L. Ferlazzo,
J. C. Harmand,
A. Ramdane,
J. G. Provost,
B. Dagens,
J. Landreau,
O. Le Gouezigou,
X. Marie
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ABSTRACT: Optimization and characterization of multiple InGaAsN/GaAs quantum-well laser diodes for high frequency operation are reported.
From the modelling of the dilute nitride quantum well, we investigate how to design the structure to achieve a high frequency
operation. The gain characteristics are optimized by incorporating the minimum amount of nitrogen in the well to obtain the
emission at 1.3μm with a low transparency density and a high differential gain. We show that the number of wells must be
adjusted to three to benefit of the best compromise between the threshold current and the differential gain. The effects of
the cavity losses on the dynamic characteristics are evaluated and demonstrate the interest for high cavity losses to reach
high relaxation frequency despite a lower characteristic temperature. An optimized structure has been realized and exhibits
an emission at 1.34μm with a transparency current density of 642 A/cm2 and a characteristic temperature T0 ~ 80 K. Dynamic properties for ridge devices are evaluated from relative intensity noise measurements and small-signal modulation.
A relaxation frequency as high as 7.4GHz and a 9.7GHz small-signal bandwidth are reported. We demonstrate transmission up
to 10Gb/s at 25°C without penalty and bit error floor.
Optical and Quantum Electronics 02/2006; 38(4):313-324. · 0.82 Impact Factor
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ABSTRACT: For the first time with a directly modulated InAs-GaAs quantum-dot laser, high extinction ratio (up to 17 dB) and 25degC-85degC single-mode-fiber data floor-free transmissions are achieved at 2.5 Gb/s. Moreover, an interferometric technique showed a nearly constant Henry factor ~2 until a bias current six times the threshold current
IEEE Photonics Technology Letters 02/2006; · 2.19 Impact Factor
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ABSTRACT: The "material" and "device" linewidth enhancement factor of 5 quantum-dot layer single mode lasers emitting at 1.3 μm are investigated using two methods for the first time, demonstrating a record value of 0.67 for this wavelength.
Lasers and Electro-Optics, 2005. (CLEO). Conference on; 06/2005
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ABSTRACT: Static performances and high-frequency characterisation of a GaInNAs/GaAs laser diode emitting at 1.35 μm are reported. Optimised molecular beam epitaxial (MBE) growth has allowed the achievement of a triple quantum well stack for improved dynamic properties. Broad area lasers exhibit a transparency current density of 642 A/cm<sup>2</sup> at 20°C under pulsed operation and a characteristic temperature T<sub>0</sub> of 80 K. Single-mode narrow-ridge waveguide devices emitting at 1.34 μm demonstrate a low threshold current of 26 mA under continuous wave (CW) operation at 25°C for an HR/as-cleaved cavity. The maximum output power reaches 9 mW with a slope efficiency of 0.13 W/A under CW operation. Intrinsic dynamic properties of the devices have been evaluated through relative intensity noise (RIN) measurements and small signal modulation. The dependence of the relaxation frequency on the bias current shows a slope of 0.92 GHz/mA<sup>1</sup>2/. The evolution of the damping factor against the squared relaxation frequency gives a K factor of 0.44 ns. RIN measurements yield a record relaxation frequency of 7.4 GHz for this triple-QW device. Small signal modulation shows a 3 dB bandwidth of 9.7 GHz for this new material system, compatible with 10-Gbit/s applications.
IEE Proceedings - Optoelectronics 11/2004; · 0.71 Impact Factor
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A. Martinez,
J.-G. Provost,
B. Dagens,
V. Sallet,
D. Jahan,
K. Merghem, L. Ferlazzo,
J. Landreau,
O. Le Gouezigou,
J.-C. Harmand,
A. Ramdane
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ABSTRACT: High frequency characterisation of three-quantum well GaInNAs/GaAs lasers operating at 1.35 μm is reported. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are demonstrated, indicating the potential for high bit rate (10 Gbit/s) direct modulation of these dilute nitrides on GaAs devices.
Electronics Letters 05/2004; · 0.96 Impact Factor
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ABSTRACT: The high frequency properties of three-quantum well GaInNAs/GaAs lasers emitting at 1.35 μm have been investigated. A relaxation frequency of 7.4 GHz and a 9.7 GHz small signal bandwidth are reported for this material system, showing potential for high-bit rate (10 Gbit/s) direct modulation.
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on;
