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ABSTRACT: Continuous wave (CW) operation of single-mode distributed feedback interband cascade (IC) lasers has been demonstrated at temperatures up to 261 K near ~3.3 m with side-mode-suppression ratio greater than 20 dB. The electrical power consumption is less than 1.1 W over the entire operating range, which enables CW operation using only thermoelectric cooling from ambient temperatures.
IEEE Journal of Selected Topics in Quantum Electronics 10/2007; · 3.78 Impact Factor
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ABSTRACT: We compare photonic crystal lasers with other microcavities for future switching and spectroscopy systems. High speed and efficiency along with massive lithographic integration makes these lasers particularly interesting for optical switching and signal processing.
Photonics in Switching, 2007; 09/2007
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ABSTRACT: We have recently developed planar photonic crystal nanolasers based on porous cavity designs. High-quality factor cavities confine light within the pores of the photonic crystal and, thus, our lasers are ideally suited for the investigation of nanoscale interactions between light and matter. We have demonstrated the operation of photonic crystal lasers within different chemical solutions, embedded them into silicone microfluidic flow channels, and were able to detect refractive index changes as small as Δn=0.005. We predict that our porous nanolasers can detect refractive index changes as small as Δn=8.23·10<sup>-4</sup>.
IEEE Journal on Selected Areas in Communications 08/2005; · 3.41 Impact Factor
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ABSTRACT: An optically triggered liquid crystal infiltrated Q-switched photonic crystal laser is demonstrated. A photonic crystal laser cavity was designed and fabricated to support two orthogonally polarized high-Q cavity modes after liquid crystal infiltration. By controlling the liquid crystal orientation via a layer of photoaddressable polymer and a writing laser, the photonic crystal lasing mode can be reversibly switched between the two modes which also switches the laser's emission polarization and wavelength. The creation of the Q-switched laser demonstrates the benefits of customizing photonic crystal cavities to maximally synergize with an infiltrated material and illustrates the potential of integrating semiconductor nanophotonics with optical materials.
Optics Express 07/2005; 13(12):4699-707. · 3.59 Impact Factor
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IEEE Journal on Selected Areas in Communications. 01/2005; 23:1348-1354.
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ABSTRACT: We propose and analyze a new photonic crystal cavity design that supports a dipole mode with a quality factor greater than 20,000. Such a high quality factor is obtained by precise tuning of the cavity length with minimal disruption of the surrounding photonic crystal. A fabrication procedure based on dry etching of InGaAsP material in HI/H2/Ar is used to demonstrate photonic crystal lasers with smooth and straight sidewalls. These room-temperature lasers concentrate optical energy in air and are suitable for use as tunable lasers and chemical sensors.
Optics Letters 05/2004; 29(7):721-3. · 3.40 Impact Factor
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Compound Semiconductors, 2003. International Symposium on; 09/2003
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ABSTRACT: InAs quantum dot (QD) distributed feedback lasers at 1.3 μm were fabricated using four stacks of InAs QD's embedded within strained InGaAs quantum wells as an active region. The lasers show stable single mode continuous wave operation at temperature of 90°C with side mode suppression ratios of above 30 dB, threshold currents as low as 20 mA and output power up to 4 mW.
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on; 09/2003
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ABSTRACT: Single-stack InAs self-assembled quantum dot (QD) lasers based on InP substrates have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers based up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with emission wavelengths between 1.59 to 1.74 μm. Above 200 K, a very low wavelength temperature sensitivity of 0.09 nm/K was obtained, which is as low as that caused by the refractive index change.
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on; 09/2003
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ABSTRACT: We have fabricated planar photonic crystal nanocavity lasers, based on our new high-quality factor design that incorporates fractional edge dislocations in triangular lattice photonic crystal cavities. Lasers with InGaAsP quantum well active material emitting at 1550nm were optically pumped with 10ns pulses, and lase at room temperature at threshold pumping powers below 220 microWatt. We have attributed this to the small mode volume and the high Q factors inherent to our device design. We have performed detailed numerical analysis of our structures, and have found an excellent agreement between theoretical predictions and experimental results. The optical field of the lasing mode in our nano-laser is localized in the air-hole region and therefore the laser can be used to investigate interaction between light and matter introduced in the cavity and nanospectroscopy.© (2003) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
07/2003;
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ABSTRACT: We have realized photonic crystal lasers that permit the introduction of analyte within the peak of the optical field of the lasing mode. We have explored the design compromises for developing such sensitive low-threshold spectroscopy sources, and demonstrate the operation of photonic crystal lasers in different ambient organic solutions. We show that nanocavity lasers can be used to perform spectroscopic tests on femtoliter volumes of analyte, and propose to use these lasers for high-resolution spectroscopy with single-molecule sensitivity. © 2003 American Institute of Physics.
Applied Physics Letters 07/2003; · 3.84 Impact Factor
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ABSTRACT: InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. We find out that the underlying InGaAs layer could affect the dot growth dramatically in terms of size distribution and luminescence efficiency. After inserting a thin GaAs interface layer between the underlying InGaAs and the InAs QD layer, improved dot size uniformity and strong room temperature photoluminescence up to 2 μm were observed. The results suggest that InAs from the underlying InGaAs layer contribute to the InAs QD formation, and cause the InAs QDs to be non-uniform, but a thin GaAs interface layer could effectively block the migration of In atoms from the InGaAs layer toward InAs QDs, and therefore lead to more uniform QD formation with better luminescence efficiency.
Indium Phosphide and Related Materials, 2003. International Conference on; 06/2003
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ABSTRACT: Summary form only given. By creating different types of defects in the photonic crystal lattice, various nanophotonics components, such as cavities and waveguides, can be realized. The quest for a compact and efficient nano-cavity, with high quality factor (Q) and small mode volume (V<sub>mode</sub>), has been a central part of research in integrated optics. Recently, we have proposed a systematic method to design optical nano-cavities that satisfy both of these requirements. The cavity consists of a defect hole that is smaller than surrounding holes arranged in the triangular lattice photonic crystal. In order to test our design we have fabricated high-Q cavities in the InGaAsP material system.
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE; 12/2002
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ABSTRACT: We compare photonic crystal lasers with other microcavities for future switching and spectroscopy systems. High speed and efficiency along with massive lithographic integration makes these lasers particularly interesting for optical switching and signal processing.
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ABSTRACT: We have investigated the miniaturization of photonic devices for ultimate photon localization, and have demon-strated two-dimensional photonic crystal nanolasers with two important quantum nanostructures-quantum wells (QWs) and quantum dots (QDs). Photonic crystal cavities with QW active material are simple, but powerful nanolasers to produce intense laser output for signal processing. On the other hand, when located in a high-quality factor (Q) nanocavity, because QD(s) strongly couple with the intense optical field, QD photonic crystal cavities are expected to be good experimental setups to study cavity quantum electrodynamics, in addition to high speed and compact laser sources. Our photonic crystal nanolasers have showed as small thresholds as 0.12mW and 0.22mW for QD-photonic crystal lasers and QW-photonic crystal lasers, respectively, by proper cavity designs and nanofabrication. For QD-photonic crystal lasers, whispering gallery modes in square lat-tice were used together with coupled cavity designs and, for QW-photonic crystal lasers, quadrapole modes in triangular lattice with fractional edge dislocations were used to produce high-Q modes with small mode volume.
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ABSTRACT: We observed modulated oscillations in lasers of up to 130 GHz by conducting frequency domain measurements on photonic crystal lasers with built-in saturable absorbers. This is an example of how the small volumes of photonic crystal lasers lead to increases in the internal modulation frequencies and enables dramatic improvements of the laser modulation rate.
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ABSTRACT: We have fabricated photonic crystal nanocavity lasers, based on a high-quality factor design that incorporates fractional edge dislocations. Lasers with InGaAsP quantum well active material emitting at 1550 nm were optically pumped with 10 ns pulses, and lased at threshold pumping powers below 220 µW, the lowest reported for quantum-well based photonic crystal lasers, to our knowledge. Polarization characteristics and lithographic tuning properties were found to be in excellent agreement with theoretical predictions.
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ABSTRACT: Near-field scanning optical microscopy was used to observe high-resolution images of confined modes and photonic bands of planar photonic crystal (PPC) nanocavities fabricated in active InGaAsP material. We have observed the smallest optical cavity modes, which are intentionally produced by fractional edge dislocation high-Q cavity designs. The size of the detected mode was roughly four by three lattice spacings. We have also observed extended dielectric-band modes of the bulk PPC surrounding the nanocavity by geometrically altering the bands in emission range and eliminating localized modes out of the emission range.
