-
D. Pennicard,
J. Marchal,
C. Fleta,
G. Pellegrini,
M. Lozano,
C. Parkes,
N. Tartoni,
D. Barnett,
I. Dolbnya,
K. Sawhney,
R. Bates,
V. O'Shea, V. Wright
[show abstract]
[hide abstract]
ABSTRACT: Three-dimensional (3D) photodiode detectors offer advantages over standard planar photodiodes in a range of applications, including X-ray detection for synchrotrons and medical imaging. The principal advantage of these sensors for X-ray imaging is their low charge sharing between adjacent pixels, which could improve spatial and spectral resolution. A 'double-sided' 3D detector has been bonded to a Medipix2 single-photon-counting readout chip, and tested in a monochromatic X-ray beam at the Diamond synchrotron. Tests of the 3D detector's response spectrum and its Line Spread Function have shown that it has substantially lower charge sharing than a standard planar Medipix2 sensor. Additionally, the 3D detector was used to image diffraction rings produced by a powdered silicon sample, demonstrating the detector's use in a standard synchrotron experiment.
IEEE Transactions on Nuclear Science 03/2010; · 1.45 Impact Factor
-
The LHCb Collaboration,
A Augusto Alves Jr,
L M Andrade Filho,
A F Barbosa,
I Bediaga,
G Cernicchiaro,
G Guerrer,
H P Lima Jr,
A A Machado,
J Magnin, [......],
O Ullaland,
A Valassi,
P Vannerem,
R Veness,
P Wicht,
D Wiedner,
W Witzeling,
A Wright,
K Wyllie,
T Ypsilantis
[show abstract]
[hide abstract]
ABSTRACT: The LHCb experiment is dedicated to precision measurements of CP violation and rare decays of B hadrons at the Large Hadron Collider (LHC) at CERN (Geneva). The initial configuration and expected performance of the detector and associated systems, as established by test beam measurements and simulation studies, is described.
Journal of Instrumentation 08/2008; 3(08):S08005. · 1.87 Impact Factor
-
The LHCb Collaboration,
A Augusto Alves Jr,
L M Andrade Filho,
A F Barbosa,
I Bediaga,
G Cernicchiaro,
G Guerrer,
H P Lima Jr,
A A Machado,
J Magnin, [......],
O Ullaland,
A Valassi,
P Vannerem,
R Veness,
P Wicht,
D Wiedner,
W Witzeling,
A Wright,
K Wyllie,
T Ypsilantis
[show abstract]
[hide abstract]
ABSTRACT: The LHCb experiment is dedicated to precision measurements of CP violation and rare decays of B hadrons at the Large Hadron Collider (LHC) at CERN (Geneva). The initial configuration and expected performance of the detector and associated systems, as established by test beam measurements and simulation studies, is described.
Journal of Instrumentation 08/2008; 3(08):S08005. · 1.87 Impact Factor
-
C Parkes,
D Pennicard,
C Fleta,
R Bates,
L Eklund,
T Szumlak,
V O Shea,
G Pellegrini,
M Lozano,
J Marchal,
N Tartoni, V Wright
[show abstract]
[hide abstract]
ABSTRACT: A new type of 3-D sensor has been developed using double sided processing with the aim of sim-plifying the production process. The results of strip and pixel devices from the first production run are presented. The devices fully deplete at 8 V. Tests on a beamline at the Diamond Synchrotron demonstrate much reduced charge sharing in the 3-D devices compared to planar devices. 3-D sensors also potentially have application in the harsh radiation environment of the LHC experi-ment upgrades. The optimal spacing between electrodes for this application has been simulated, and a cell dimension of 50-100 µm found to be optimal. The work is placed in the context of other types of 3-D architecture detectors and the work of other groups on the commercial fabrication of devices is briefly reported.
PoSVERTEX. 01/2008;
-
[show abstract]
[hide abstract]
ABSTRACT: A new ldquodouble sidedrdquo 3-D solid-state detector structure, intended to simplify the 3-D fabrication process, is proposed. In this structure, electrode columns of different doping types are etched from opposite sides of the substrate, with neither set of columns passing through the full substrate thickness. The finite-element simulation package ISE-TCAD is used to determine the performance of this structure. The double-sided detector shows similar electrostatic behavior to a standard 3-D detector, giving a low depletion voltage and fast charge collection. However, unless the electrode column length is very close to the substrate thickness, charge deposited around the front and back surfaces of the device is collected less quickly (though still rapidly compared with a planar geometry device). The breakdown voltage is dominated by high-field regions around the tips of the electrode columns and shows little change when the oxide charge is increased.
IEEE Transactions on Nuclear Science 09/2007; · 1.45 Impact Factor
-
British Journal of Dermatology 07/2006; 91(s10):22 - 23. · 3.67 Impact Factor
-
M. Bruzzi,
J. Adey,
A. Al-Ajili,
P. Alexandrov,
G. Alfieri,
P P Allport,
A Andreazza,
M. Artuso,
S. Assouak,
B.S. Avset, [......],
I Wilhelm,
S Worm, V. Wright,
R Wunstorf,
P. Zablerowski,
A. Zaluzhny,
M. Zavrtanik,
M. Zen,
V Zhukov,
N. Zorzi
[show abstract]
[hide abstract]
ABSTRACT: An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016cm-2. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work. 2005 Published by Elsevier B.V.
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 05/2005; 541:189-201. · 1.21 Impact Factor
-
M. Moll,
J. Adey,
A. Al-Ajili,
G. Alfieri,
P P Allport,
M. Artuso,
S. Assouak,
B.S. Avset,
L. Barabash,
A. Barcz, [......],
S Worm, V. Wright,
R Wunstorf,
Y. Yiuri,
P. Zabierowski,
A. Zaluzhny,
M. Zavrtanik,
M. Zen,
V Zhukov,
N. Zorzi
[show abstract]
[hide abstract]
ABSTRACT: The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10(35) cm(-2) s(-1) Will present severe challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10 ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 collaboration are presented. (c) 2005 Elsevier B.V. All rights reserved.
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 05/2005; 546:99-107. · 1.21 Impact Factor
-
E. Fretwurst,
J. Adey,
A. Al-Ajili,
G. Alfieri,
P.P. Allport,
M. Artuso,
S. Assouak,
B.S. Avset,
L. Barabash,
A. Barcz, [......],
S. Worm, V. Wright,
R. Wunstorf,
Y. Yiuri,
P. Zabierowski,
A. Zaluzhny,
M. Zavrtanik,
M. Zen,
V. Zhukov,
N. Zorzi
[show abstract]
[hide abstract]
ABSTRACT: The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Further, with 3D, Semi-3D and thin devices new detector concepts have been evaluated. These and other recent advancements of the RD50 collaboration are presented and discussed.
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 05/2005; 552:7-19. · 1.21 Impact Factor
-
M. Rahman,
A. Al-Ajili,
R. Bates,
A. Blue,
W. Cunningham,
F. Doherty,
M. Glaser,
L. Haddad,
M. Horn,
J. Melone,
M. Mikuz,
T. Quinn,
P. Roy,
V. O'Shea,
K.M. Smith,
J. Vaitkus, V. Wright
[show abstract]
[hide abstract]
ABSTRACT: The radiation hardness of semiconductor detectors for harsh environments, including nuclear, space, and particle physics, may be enhanced by a number of strategies. We examine the use of materials alternative to silicon, namely silicon carbide and gallium nitride, as well as a nonconventional geometry called "3-D." Fabricated detectors were irradiated to fast hadron fluences of 10<sup>14</sup> cm<sup>-2</sup> and measurements were made of I--V, C--V and charge collection efficiency before and after irradiation. The performance in each case was found to degrade only slightly, promising highly radiation tolerant operation.
IEEE Transactions on Nuclear Science 11/2004; · 1.45 Impact Factor
-
M. Rahman,
R. Bates,
A. Blue,
W. Cunningham,
E. Gaubas,
A. Gouldwell,
M. Horn,
V. Kazukauskas,
C. Parkes,
T. Quinn,
P. Roy,
V. O'Shea,
K.M. Smith,
J. Vaitkus, V. Wright
[show abstract]
[hide abstract]
ABSTRACT: The proposed upgrade of the CERN Large Hadron Collider to ten times brighter luminosity poses severe challenges to semiconductor detectors within the CERN experiments. We investigate a silicon "3-D" detector design for these conditions and semiconductors alternative to silicon, namely silicon carbide and gallium nitride. Charge collection measurements suggest some degree of additional radiation tolerance over conventional detector geometry and materials.
IEEE Transactions on Nuclear Science 01/2004; · 1.45 Impact Factor
-
Annals of the Rheumatic Diseases 01/1964; 23:12-21. · 8.73 Impact Factor
-
E Fretwurst,
J. Adey,
A. Al-Ajili,
G. Alfieri,
PP Allport,
M. Artuso,
S. Assouak,
BS Avset,
L. Barabashi,
A. Barcz, [......],
S Worm, V. Wright,
R Wunstorf,
Y. Yiuri,
P. Zabierowski,
A. Zaluzhny,
M. Zavrtanik,
M. Zen,
V Zhukov,
N. Zorzi
-
The LHCb Collaboration,
A. Augusto Alves,
L M Andrade Filho,
A. F. Barbosa,
I. Bediaga,
G. Cernicchiaro,
G. Guerrer,
H.P. Lima,
A A Machado,
J. Magnin, [......],
O Ullaland,
A Valassi,
P Vannerem,
R. Veness,
P Wicht,
D. Wiedner,
W Witzeling,
A Wright,
K. Wyllie,
T Ypsilantis
-
AA Alves,
LM Andrade,
AF Barbosa,
I. Bediaga,
G. Cernicchiaro,
G. Guerrer,
HP Lima,
AA Machado,
J. Magnin,
F Marujo, [......],
O Ullaland,
A Valassi,
P Vannerem,
R. Veness,
P Wicht,
D. Wiedner,
W Witzeling,
A Wright,
K. Wyllie,
T Ypsilantis
-
A. A. Alves,
L. M. Andrade,
A. F. Barbosa,
I. Bediaga,
G. Cernicchiaro,
G. Guerrer,
H.P. Lima,
A A Machado,
J. Magnin,
F Marujo, [......],
O Ullaland,
A Valassi,
P Vannerem,
R. Veness,
P Wicht,
D. Wiedner,
W Witzeling,
A Wright,
K. Wyllie,
T Ypsilantis
Journal of Instrumentation, v.3 (2008).
-
E Fretwurst,
J. Adey,
A. Al-Ajili,
G. Alfieri,
P P Allport,
M. Artuso,
S. Assouak,
B.S. Avset,
L. Barabashi,
A. Barcz, [......],
S Worm, V. Wright,
R Wunstorf,
Y. Yiuri,
P. Zabierowski,
A. Zaluzhny,
M. Zavrtanik,
M. Zen,
V Zhukov,
N. Zorzi
[show abstract]
[hide abstract]
ABSTRACT: The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 10(16) hadrons/cm(2). Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Further, with 3D, Semi-3D and thin devices new detector concepts have been evaluated. These and other recent advancements of the RD50 collaboration are presented and discussed. (c) 2005 Elsevier B.V. All rights reserved.
Physics Research Publications.
-
T. Bowcock,
J Buytaert,
G. Casse,
M. Charles,
H Dijkstra,
P Collins,
O. Dormond,
M Ferro-Luzzi,
F Fiedler,
R. Frei, [......],
P Jalocha,
J Libby,
T Ketel,
C Parkes,
U Parzefall,
T. Ruf,
M Tareb,
F Teubert, V. Wright,
M Witek
[show abstract]
[hide abstract]
ABSTRACT: A prototype silicon detector for the LHCb experiment has been irradiated non-uniformly with fluences of up to 10(15) p/cm(2) of 24 GeV protons and tested with LHC speed electronics in a test beam, After doses equivalent to one year of operation at the LHC, the detector was operational, and deteriorated after higher doses. The performance of this detector identifies particular risks associated with a p-on-n fine pitch design with a double metal layer.
-
[show abstract]
[hide abstract]
ABSTRACT: The use of the 3D detector geometry, where the electrodes go through the bulk of the semiconductor instead of sitting at the surface, allows the life of semiconductor devices to be extended in harsh radiation environments. This geometry also enables the use of less than optimal, material, i.e. with poorer charge collection efficiency. Three different production methods have been investigated: dry etching, laser machining and photoelectrochemical etching. The electrical characteristics of the resulting test devices made in low resistivity silicon and gallium arsenide have been studied. Some of these 3D detectors were characterised after irradiation by 300 MeV/c pions, up to a fluence of 10(14)pi/cm(2) at the Paul Scherrer Institute, Villigen.
-
LHCb Collaboration,
PR Barbosa-Marinho,
I. Bediaga,
AF Barbosa,
G. Cernicchiaro,
EC de Oliveira,
J. Magnin,
JM de Miranda,
A. Massafferri,
A. Reis, [......],
W Tejessy,
F Teubert,
J Toledo Alarcon,
O Ullaland,
A Valassi,
P. Vazquez Regueiro,
I Videau,
P Wertelaers,
A Wright,
K. Wyllie
