J.S. Lee

Publications (2)3.23 Total impact

• Article: An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth

  J.S. Weiner, J.S. Lee, A. Leven, Y. Baeyens, V. Houtsma, G. Georgiou, Yang Yang, J. Frackoviak, A. Tate, R. Reyes, R.F. Kopf, Wei-Jer Sung, N.G. Weimann, Young-Kai Chen
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  ABSTRACT: Return-to-zero differential phase-shift keying applications require a differential amplifier with high bandwidth, high gain, low noise, and good input impedance match. In this paper, we describe an InGaAs-InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-Ω. The input-referred current noise is less than 35 pA/√Hz over the measurement range up to 40 GHz.
  IEEE Journal of Solid-State Circuits 11/2004; · 3.23 Impact Factor
• Conference Proceeding: An InGaAs/InP HBT differential transimpedance amplifier with 47 GHz bandwidth

  J.S. Weiner, J.S. Lee, A. Leven, Y. Baeyens, V. Houtsma, G Georgiou, Y Yang, J. Frackoviak, A. Tate, R. Reyes, R.F. Kopf, W.J. Sung, N.G. Weimann, Y.K. Chen
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  ABSTRACT: In this paper, we describe an InGaAs/InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-ohms.
  Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE; 12/2003