B. Brown

Publications (3)0 Total impact

• Conference Proceeding: Wideband PA and LAN for 60-GHz Radio in 90-nm LP CMOS Technology

  Jau-Jr Lin, Kun-Hin To, B. Brown, D. Hammock, M. Majerus, M. Tutt, W.M. Huang
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  ABSTRACT: paper reports a LNA and a PA for IEEE802.15 WAPN application in a 90-nm LP (low power) 1P6M CMOS technology. The LNA has a 13-dB peak gain and a 7-dB NF and the PA has a 9.8-dB gain and a +11.2-dBm saturated output power. Both LNA and PA have achieved input and output matching bandwidths exceeding 10 GHz, while the reflection coefficient (|S₁₁|, |S₂₂|) < -10 dB. The design was targeted that |S₂₂| variation within 2 dB from the peak over the frequencies and the measured 2-dB bandwidth of both LNA and PA are also exceeding 14 GHz. Both LAN and PA should be able to accommodate 9-GHz bandwidth requirement of IEEE802.15 WPAN application. A high performance PA and LNA are achieved with this backend process.
  Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE; 11/2008
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  Conference Proceeding: Integration of selectively implanted collector (SIC) of SiGe:C HBT for optimised performance and manufacturability

  F.K. Chai, J. Kirchgessner, R. Cross, D. Hammock, C. Lesher, D. Morgan, H. Rueda, Jin Tang, Guofu Niu, S. Stewart, J. John, S. Wipf, B. Brown
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  ABSTRACT: An investigation of various selectively implanted collector (SIC) integration options for SiGe:C HBT devices is reported. SIC integration before and after SiGe:C base epi as well as the size and concentration of the SIC region are evaluated. Tradeoffs between device performance and manufacturability for various SIC integration options are discussed.
  Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the; 10/2003
• Conference Proceeding: 60GHz LNA and 15GHz VCO Design for Use in Broadband Millimeter-Wave WPAN System

  K. To, P. Welch, D. Scheitlin, B. Brown, D. Hammock, M. Tutt, D. Morgan, S. Braithwaite, J. John, J. Kirchgessner, W.M. Huang
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  ABSTRACT: This paper presents a 60 GHz LNA and a 15 GHz VCO with wide frequency range for Millimeter WPAN operating from 57-64 GHz. Using a cost-effective SiGe BiCMOS technology with ft and fmax of 200 GHz and 300 GHz respectively, the LNA demonstrates good matching and a gain of more than 20 dB with excellent flatness (less than 1.2 dB) from SSGHz to 65 GHz. The 15 GHz VCO, which is used to generate the 60 GHz LO signal, exhibits high output power of above 2 dBm with tuning range of 20%. This translates to a frequency range of 53 GHz to 66 GHz.
  Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE;