Y.C. Oh

Kwangwoon University, Seoul, Seoul, South Korea

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Publications (4)0 Total impact

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    ABSTRACT: The (Sr<sub>0.9</sub>Ca<sub>0.1</sub>)TiO<sub>3</sub>(SCT) thin films were deposited on Pt-coated electrode (Pt/TiN/SiO<sub>2</sub>/Si) using RF magnetron sputtering method. The composition of SCT thin film were closed to stoichiometry (1.081 in A/B ratio). The optimum annealing temperature of SCT thin film was 600[°C]. The dielectric constant depending on the annealing temperature was shown to be the great 146 at 600[°C]. The temperature coefficients of capacitance exhibit very stable values below ±4[%] in the temperature range of -80 ∼ 90[°C]. The temperature properties of the dielectric loss have a stable value within 0.02. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz].
    Electrical Insulating Materials, 2005. (ISEIM 2005). Proceedings of 2005 International Symposium on; 07/2005
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    ABSTRACT: The Sr<sub>0.8</sub>Bi<sub>2.2</sub>Ta<sub>2</sub>O<sub>9</sub> (SBT) thin films are deposited on Pt-coated electrode (Pt/TiO<sub>2</sub>/SiO<sub>2</sub>/Si) using RF magnetron sputtering method. The electrical properties of SBT capacitors with top electrodes were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, bi-layered perovskite phase was crystallized at 750 °C and grains largely grew in oxygen annealing atmosphere. The electrical properties of SBT capacitor with top electrodes represents a favorable properties in Pt electrode. The maximum remanent polarization and the coercive electric field with Pt electrode are 12.40μC/cm<sup>2</sup> and 30 kV/cm respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 6.81 x 10<sup>-10</sup> A/cm<sup>2</sup> respectively.
    Electrical Insulating Materials, 2005. (ISEIM 2005). Proceedings of 2005 International Symposium on; 07/2005
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    ABSTRACT: The (Sr/sub 0.9/Ca/sub 0.1/)TiO/sub 3/(SCT) thin films were deposited on Pt-coated electrode (Pt/TiN/SiO/sub 2//Si) using RF magnetron sputtering method. The composition of SCT thin film were closed to stoichiometry (1.081 in A/B ratio). The optimum annealing temperature of SCT thin film was 600[/spl deg/C]. The dielectric constant depending on the annealing temperature was shown to be the great 146 at 600[/spl deg/C]. The temperature coefficients of capacitance exhibit very stable values below /spl plusmn/4[%] in the temperature range of -80 /spl sim/ 90[/spl deg/C]. The temperature properties of the dielectric loss have a stable value within 0.02. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz].
    International Symposium on Electrical Insulating Materials. 06/2005; 3:600-603 Vol. 3.
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    ABSTRACT: The A Sr<sub>0.7</sub>Bi<sub>2.6</sub>Ta<sub>2</sub>O<sub>9</sub>(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO<sub>2</sub>/SiO<sub>2</sub>/Si) using RF magnetron sputtering method. The electrical properties of SBT capacitors with top electrodes were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at 750°C and grains largely grew in oxygen annealing atmosphere. The electrical properties of SBT capacitor with top electrodes represents a favorable properties in Pt electrode. The maximum remanent polarization and the coercive electric field with Pt electrode are 12.40 μC/cm<sup>2</sup> and 30 kV/cm respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 6.81×10<sup>-10</sup> A/cm<sup>2</sup> respectively.
    Properties and Applications of Dielectric Materials, 2003. Proceedings of the 7th International Conference on; 07/2003