Publications (70)173.15 Total impact

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ABSTRACT: Spin quantum beat spectroscopy is employed to investigate the inplane anisotropy of the spin dynamics in (001) GaAs/AlGaAs quantum wells induced by an external electric field. This technique allows the anisotropy of the spin relaxation rate Γs and the electron Landé g factor g* to be measured simultaneously. The measurements are compared to similar data from (001) GaAs/AlGaAs quantum wells with applied shear strain and asymmetric barrier growth. All of these operations act to reduce the symmetry compared to that of a symmetric (001) quantum well in an identical manner (D2d → C2v). However, by looking at the anisotropy of both Γs and g* simultaneously we show that the microscopic actions of these symmetry breaking operations are very different. The experiments attest that although symmetry arguments are a very useful tool to identify the allowed spin dependent properties of a material system, only a microscopic approach reveals if allowed anisotropies will manifest.Physical review. B, Condensed matter 02/2013; 87(7). DOI:10.1103/PhysRevB.87.075304 · 3.66 Impact Factor 
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ABSTRACT: We show experimentally, using spin quantum beat spectroscopy, that strain applied to an undoped symmetric (001) GaAs/AlGaAs multiple quantum well causes an inplane anisotropy of the spinrelaxation rate Γs, but leaves the electron Landé g factor isotropic. The spinrelaxationrate anisotropy gives a direct measure of the bulk inversion asymmetry and the strain contributions to the conductionband spin splitting. The comparison of the measured strainsplitting coefficient C3 for the quantum well with the value for bulk GaAs suggests a dependence on electron quantum confinement. The isotropic g factor implies a symmetric conduction electron wave function, whereas the anisotropic spinrelaxation rate requires a nonzero expectation value of the valenceband potential gradient on the conductionband states. Therefore, the experiment suggests that strain generates an effective valenceband potential gradient, while the conductionband potential remains symmetrical to a good approximation.Physical review. B, Condensed matter 10/2011; 84(15). DOI:10.1103/PhysRevB.84.155323 · 3.66 Impact Factor 
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ABSTRACT: We measure simultaneously the inplane electron g factor and spinrelaxation rate in a series of undoped inversionasymmetric (001)oriented GaAs/AlGaAs quantum wells by spinquantum beat spectroscopy. In combination the two quantities reveal the absolute values of both the Rashba and the Dresselhaus coefficients and prove that the Rashba coefficient can be negligibly small despite huge conductionband potential gradients which break the inversion symmetry. The negligible Rashba coefficient is a consequence of the “isomorphism” of conduction and valenceband potentials in quantum systems where the asymmetry is solely produced by alloy variations.Physical review. B, Condensed matter 01/2011; 83(4). DOI:10.1103/PhysRevB.83.041301 · 3.66 Impact Factor 
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ABSTRACT: We report a comparison of conduction electron spinsplitting in IIIV quantum wells caused by asymmetric band edges with that due to applied electric field. Measurements in GaAs/AlGaAs quantum wells and calculations on a range of heterostructures, both symmetric and asymmetric, lead to the conclusion that in a heterostructure with nearly “isomorphous” band edges (i.e., with conduction and valence bandedge potentials related by a constant factor, exemplified by GaAs/AlGaAs) spin splittings will be unmeasurably small even in a highly asymmetric structure. Application of an external electric field or the presence of a Hartree potential gradient in the system will generally break isomorphism and therefore produce a significant spin splitting.Physical review. B, Condensed matter 07/2010; 82(4). DOI:10.1103/PhysRevB.82.045317 · 3.66 Impact Factor 
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ABSTRACT: We fabricate a highly efficient colour conversion light emitting diode consisting of surfacepatterned blue emitters and semiconductor colloidal nanocrystal quantum dots (NQDs). Electrically injected carriers in the blue emitter (donor) are efficiently transferred to the NQDs (acceptor) via nonradiative energy transfer in addition to conventional radiative energy transfer. The existence of nonradiative energy transfer is verified by the simultaneous observation of increased donor emission decay rate, the transient transfer of carriers at the acceptor and a 2fold enhancement of the NQD electroluminescence.Advanced Materials 02/2010; 22(5):6026. DOI:10.1002/adma.200902262 · 15.41 Impact Factor 
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ABSTRACT: We report a study of the nonlinear birefringence in undoped (110)oriented GaAs/AlGaAs quantum wells using timeresolved pumpprobe Kerr spectroscopy. Due to the optical anisotropy of the (110) quantum well plane, photoexcited carriers can give rise to a nonlinear birefringence and so cause probe polarization rotation independent of the pump polarization, i.e., independent of spin orientation. We develop a methodology for accurate determination of electronspin lifetimes using the Kerr technique which takes account of this phenomenon and present roomtemperature measurements of wavelength and power density dependence of the spinrelaxation rate.Physical review. B, Condensed matter 01/2010; 81(3). DOI:10.1103/PhysRevB.81.033302 · 3.66 Impact Factor 
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ABSTRACT: For conduction electrons moving in quantum wells, a transverse electric field appears as an effective magnetic field causing spin relaxation via the DyakonovPerel mechanism. For undoped samples, the strength of the effective magnetic field for a particular electric field and temperature is determined by the Rashba coefficient. By combining spin grating and relaxation measurements, we have measured the Rashba coefficient for GaAs∕AlGaAs quantum wells. There is good agreement with k.p theory at low temperature. We observe a deviation from the theoretical value at higher temperatures which could be a result of higher order terms in the Rashba spinorbit interaction not normally considered.01/2010; DOI:10.1063/1.3295468 
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ABSTRACT: It is widely accepted that quantum wells with potential profiles lacking inversion symmetry will exhibit spinsplit conduction band states due to the Rashba spinorbit interaction. Here we measure conduction band splitting for undoped asymmetric and symmetric GaAs/AlGaAs quantum wells in the absence of electric fields. Surprisingly the conduction band spinsplitting measured in asymmetric quantum wells is no greater than that measured in symmetric quantum wells. This is a consequence of Ehrenfests theorem and the fact that the conduction and valence band edge profiles are related by a constant factor.01/2010; DOI:10.1063/1.3295469 
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ABSTRACT: Asymmetric quantum well potentials are expected to produce a conduction band spinsplitting which contributes to Dyakonov–Perel (Sov. Phys. Solid State 13:3023, 1971) spin relaxation. Much experimental work has focused on the effect of an electric field on spin dynamics (Karimov et al., in Phys. Rev. Lett. 91:246601, 2003) and little on asymmetry from alloy engineering. By combining timeresolved Kerr rotation measurements with transient spin grating measurements in GaAs/AlGaAs quantum wells we have compared the conduction band spinsplitting resulting from asymmetric alloy engineering with that from applied electric field. The latter is easily measurable, whilst the former is no greater than that in symmetric wells. These results are consistent with an envelope function approximation model that considers the potential profile in both the conduction and the valence bands (Winkler, in Springer Tracts in Modern Physics, vol. 191, 2003).Journal of Superconductivity and Novel Magnetism 01/2010; 23(1):157159. DOI:10.1007/s109480090546x · 0.93 Impact Factor 
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ABSTRACT: A hybrid colloidal CdTe nanocrystal/bulk GaAs pin heterostructure is demonstrated to have potential for highly efficient light harvesting photovoltaic devices. An array of rectangular channels is fabricated on the surface of the GaAs heterostructure penetrating through its active layer and subsequently filled with water soluble CdTe nanocrystals emitting in the near infrared. Photogenerated carriers in the highly absorbing colloidal nanocrystals are efficiently transferred by means of nonradiative energy transfer to the patterned heterostructure possessing high carrier mobility and converted to electrical current. A threefold enhancement of both photocurrent and monochromatic power conversion efficiency has been achieved.Applied Physics Letters 06/2009; 94(23):2335022335023. DOI:10.1063/1.3148368 · 3.52 Impact Factor 
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ABSTRACT: We fabricate a hybrid nanocrystal quantumdot patterned pin structure that utilizes nonradiative energy transfer from highly absorbing colloidal nanocrystal quantum dots to a patterned semiconductor slab to demonstrate a sixfold increase of the photocurrent conversion efficiency compared to the bare pin semiconductor device.Physical Review Letters 03/2009; 102(7):077402. DOI:10.1103/PhysRevLett.102.077402 · 7.73 Impact Factor 
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ABSTRACT: To an electron moving in free space an electric field appears as a magnetic field which interacts with and can reorient the electron spin. In semiconductor quantum wells this spinorbit interaction seems to offer the possibility of gatevoltage control in spintronic devices but, as the electrons are subject to both ioncore and macroscopic structural potentials, this oversimple picture has lead to intense debate. For example, an externally applied field acting on the envelope of the electron wavefunction determined by the macroscopic potential, underestimates the experimentally observed spinorbit field by many orders of magnitude while the Ehrenfest theorem suggests that it should actually be zero. Here we challenge, both experimentally and theoretically, the widely held belief that any inversion asymmetry of the macroscopic potential, not only electric field, will produce a significant spinorbit field for electrons. This conclusion has farreaching consequences for the design of spintronic devices while illuminating important fundamental physics. Comment: 7 pages, 5 figs 
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ABSTRACT: Nonradiative energy transfer from a GaAs quantum well to a thin overlayer of an infrared organic semiconductor dye is unambiguously demonstrated. The dynamics of exciton transfer are studied in the time domain by using pumpprobe spectroscopy at the donor site and fluorescence spectroscopy at the acceptor site. The effect is observed as simultaneous increase in the population decay rate at the donor and of the rise time of optical emission at the acceptor sites. The hybrid configuration under investigation provides an alternative nonradiative, noncontact pumping route to electrical carrier injection that overcomes the losses imposed by the associated low carrier mobility of organic emitters.Physical Review B 05/2008; 77(19). DOI:10.1103/PhysRevB.77.193402 · 3.66 Impact Factor 
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ABSTRACT: We design, fabricate and demonstrate a hybrid nanocrystal/patterned pin device that utilises fluorescence energy transfer and exhibits a threefold increase of the measured photocurrent compared to its bare pin counterpart. 
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ABSTRACT: We tune the exchange interaction in nanocrystals by manipulating the electronhole wavefunction overlap under external electric fields and simultaneously probe the electronic structure and rich transient dynamics under strong magnetic fields (8T). 
Article: EnergyDependent ElectronElectron Scattering and Spin Dynamics in a Two Dimensional Electron Gas
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ABSTRACT: Measurements of spin dynamics of electrons in a degenerate two dimensional electron gas, where the DyakonovPerel mechanism is dominant, have been used to investigate the electron scattering time (tp*) as a function of energy near the Fermi energy. Close to the Fermi energy the spin evolution is oscillatory, indicating a quasicollisionfree regime of spin dynamics. As the energy is increased a transition to exponential, collisiondominated, spin decay occurs. The frequency and the value of tp* are extracted using a Monte Carlo simulation method. At the Fermi energy tp* is very close to the ensemble momentum relaxation time (tp) obtained from the electron mobility. For higher energies tp* falls quadratically, consistent with theoretical expectations for the onset of electronelectron scattering which is inhibited by the Pauli principle at the Fermi energy.Physical review. B, Condensed matter 04/2008; 77(20). DOI:10.1103/PhysRevB.77.205321 · 3.66 Impact Factor 
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ABSTRACT: We perform an alloptical spindynamic measurement of the Rashba spinorbit interaction in (110)oriented GaAs∕AlGaAs quantum wells under applied electric field. This crystallographic orientation allows us to isolate the Rashba from other contributions, giving precise values of the Rashba coefficient. At low temperature, we find good agreement between our measurements and the k⋅p theory. Unexpectedly, we observe a temperature dependence of the Rashba coefficient that may signify the importance of higherorder terms of the Rashba coupling.Physical Review B 03/2008; 77(12). DOI:10.1103/PhysRevB.77.125344 · 3.66 Impact Factor 
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ABSTRACT: Optical pumpprobe measurements of spin dynamics at temperatures down to 1.5K are described for a series of (001)oriented GaAs/AlGaAs quantum well samples containing high mobility twodimensional electron gases (2DEGs). For well widths ranging from 5to20nm and 2DEG sheet densities from 1.75×1011to3.5×1011cm2 , the evolution of a small injected spin population is found to be a damped oscillation rather than an exponential relaxation, consistent with the quasicollisionfree regime of the DyakonovPerel spin dynamics. A Monte Carlo simulation method is used to extract the spinorbitinduced electron spin precession frequency Omega(kF) and electron momentum scattering time taup* at the Fermi wave vector. The spin decay time passes through a minimum at a temperature corresponding to the transition from collisionfree to collisiondominated regimes and taup* is found to be close to the ensemble momentum scattering time taup obtained from Hall measurements of electron mobility. The values of Omega(kF) give the Dresselhaus or bulk inversion asymmetry (BIA) coefficient of spinorbit interaction as a function of electron confinement energy in the quantum wells and show, qualitatively, the behavior expected from k•p theory.Physical review. B, Condensed matter 11/2007; 76(19). DOI:10.1103/PhysRevB.76.195305 · 3.66 Impact Factor 
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ABSTRACT: We perform an alloptical spindynamic measurement of the Rashba spinorbit interaction in (110)oriented GaAs/AlGaAs quantum wells. The crystallographic direction of quantum confinement allows us to disentangle the contributions to spinorbit coupling from the structural inversion asymmetry (Rashba term) and the bulk inversion asymmetry. We observe an unexpected temperature dependence of the Rashba spinorbit interaction strength that signifies the importance of the usually neglected higherorder terms of the Rashba coupling. 
Article: Temperature dependence of exciton transfer in hybrid quantum well/nanocrystal heterostructures
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ABSTRACT: The authors investigate the temperature dependence of exciton transfer from a single InGaN quantum well (QW) donor to colloidal CdS nanocrystal quantum dot acceptors and obtain an optimum transfer efficiency of 65% at 60 K. Time and spectrally resolved measurements reveal that the transfer efficiency is dominated by the interplay between exciton localization and nonradiative recombination intrinsic to the QW.Applied Physics Letters 08/2007; 91(9):0921260921263. DOI:10.1063/1.2776865 · 3.52 Impact Factor
Publication Stats
1k  Citations  
173.15  Total Impact Points  
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Institutions

1990–2013

University of Southampton
 • Department of Physics and Astronomy
 • Centre for Risk Research
Southampton, England, United Kingdom 
University of Oxford
Oxford, England, United Kingdom
