[Show abstract][Hide abstract] ABSTRACT: The effects of the fabrication process on the current-voltage (I-V) characteristics of carbon nanotube field effect transistors (CNT-FETs) were studied in detail. A large hysteresis observed in the I-V characteristics of the CNT-FETs having no passivation film became small by passivating the device surface with a SiNx film. The conduction behaivior of the CNT-FETs changed from p-type to ambipolar characteristics by SiNx passivation. Ambipolar characteristics were also observed in the top-gate CNT-FETs with a gate-source spacing of 2 mum.
Japanese Journal of Applied Physics 04/2005; 44(4A):1599-1602. DOI:10.1143/JJAP.44.1599 · 1.06 Impact Factor
[Show abstract][Hide abstract] ABSTRACT: Position-controlled carbon nanotube field effect transistors (FETs) have been fabricated by using patterned catalysts and chemical vapor deposition. A double-layer metal of platinum and cobalt was used as the catalyst. The use of a mixture of ethanol and argon as the source gas was effective for obtaining FETs with good characteristics. Coulomb oscillation was observed at room temperature. 76% of the fabricated devices showed FET operation. The characteristics of FETs with metallic nanotubes were improved by applying a high voltage.
Japanese Journal of Applied Physics 06/2003; 42(6B):4116-4119. DOI:10.1143/JJAP.42.4116 · 1.06 Impact Factor
[Show abstract][Hide abstract] ABSTRACT: Carbon nanotube (CNT) devices receive much attention from both physical and technological points of view because of the ideal one-dimensional structure, nano-size dimension, and ultra-low power dissipation. In order to realize CNT integrated circuits, it is important to fabricate CNT field-effect transistors (FETs) at designed positions. In this work, we fabricated position-controlled CNT FETs by chemical vapor deposition (CVD) synthesis using metal catalysts patterned on a silicon wafer. Good FET operations have been obtained.
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International; 12/2002