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ABSTRACT: A mode-locked Raman fiber laser pumped by 1.3 µm semiconductor disk laser is demonstrated. Direct Watt-level core-pumping of the single-mode fiber Raman lasers and amplifiers with low-noise disk lasers is demonstrated to represent a highly practical solution as compared with conventional scheme using pumping by Raman wavelength convertors. Raman laser employing passive mode-locking by nonlinear polarization evolution in normal dispersion regime produces stable pedestal-free 1.97 ps pulses at 1.38 µm. Using semiconductor disk lasers capable of producing high power with diffraction-limited beam allows Raman gain to be obtained at virtually any wavelength of interest owing to spectral versatility of semiconductor gain materials and wafer-fusing technology.
Optics Express 11/2010; 18(23):23872-7. · 3.59 Impact Factor
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ABSTRACT: A widely-tunable single-mode 1.3 μm vertical-cavity surface-emitting laser structure incorporating a microelectromechanical system-tunable high-index-contrast subwavelength grating (HCG) mirror is suggested and numerically investigated. A linear tuning range of 100 nm and a wavelength tuning efficiency of 0.203 are predicted. The large tuning range and efficiency are attributed to the incorporation of the tuning air gap as part of the optical cavity and to the use of a short cavity structure. The short cavity length can be achieved by employing a HCG design of which the reflection mechanism does not rely on resonant coupling. The absence of resonance coupling leads to a 0.59 λ-thick penetration depth of the HCG and enables to use a 0.25 λ-thick tuning air gap underneath the HCG. This considerably reduces the effective cavity length, leading to larger tuning range and efficiency. The basic properties of this new structure are analyzed, and shown to be explained by analytical expressions that are derived in the paper. In this context, the penetration depth of the HCG is introduced and shown to be an important characteristic length scale. Throughout the tuning wavelength range, strong single mode operation was maintained and uniform output power is expected.
IEEE Journal of Quantum Electronics 10/2010; · 1.88 Impact Factor
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ABSTRACT: We report 1.3-μm mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localized wafer fusion. An intracavity wedged diamond heat spreader capillary bonded to the gain chip prevents the disruption of 6.4-ps pulse spectrum and supports 100 mW of average power. The results reveal an advantage of wafer fusion process of disparate materials over monolithically grown InP-based gain/absorber structures and demonstrate practical potential of the technique for long-wavelength SDLs.
IEEE Photonics Technology Letters 07/2010; · 2.19 Impact Factor
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ABSTRACT: We demonstrate a wafer fused mode-locked optically-pumped semiconductor disk laser operating at 1.3 μm spectral range. Both the gain mirror and the SESAM incorporate InP-based active region wafer fused with GaAs/AlGaAs distributed Bragg reflector.
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on; 06/2010
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ABSTRACT: Novel 1310 nm and 1550 nm optically pumped VECSELs based on wafer fused InAlGaAs/InPAlGaAs/GaAs gain mirrors demonstrate high CW fundamental mode continuous wave output in excess of 2 W at room temperature.
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE; 11/2009
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ABSTRACT: We review recent results on wafer fused long wavelength VCSELs emitting in the 1310 - 2000 nm range. This technology allows reaching fundamental mode output in excess of 4.5 mW at room temperature and close to 3 mW at 70degC for both the 1310 nm and 1550 nm wavebands-the highest values obtained so far. Emission wavelength can be tuned continuously with current with a tuning range as large as 15 nm. For 2000 nm emission wavelength, room temperature output is ~ 0.5 mW, limited so far by high optical absorption in the cavity. 1310 nm-VCSELs that are optimized for high speed operation yield excellent 10 Gbps operation both at room temperature and at 100degC.
Transparent Optical Networks, 2009. ICTON '09. 11th International Conference on; 08/2009
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ABSTRACT: A novel long wavelength VCSEL structure incorporating a subwavelength grating mirror, an embedded air gap and a tunnel junction is suggested. The laser has very strong single-mode characteristics and strong polarization stability.
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on; 06/2009
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ABSTRACT: 10-Gb/s modulation speed up to 100degC temperature is achieved with wafer-fused VCSELs incorporating re-grown tunnel junction and emitting more than 1-mW single mode power at the 1300-nm waveband in the full temperature range.
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on; 06/2009
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ABSTRACT: We report on 1550-nm fused VCSELs with 6.8 mW SM power at 0degC and 2.6-mW at 80degC. These devices can be tuned with current by 15 nm.
Optical Communication, 2008. ECOC 2008. 34th European Conference on; 10/2008
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A. Backer,
S. Odermatt,
R. Santschi,
F. Romer,
B. Witzigmann,
P. Royo,
V. Iakovlev,
A. Caliman, A. Mereuta,
A. Syrbu,
E. Kapon
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ABSTRACT: We present a detailed numerical study of transverse mode selection of vertical-cavity surface-emitting lasers (VCSELs), based on microscopic models of charge carrier and temperature distributions solved self-consistently together with the optical modes. The simulations describe several measured device characteristics of tunnel junction double-fused VCSELs, in particular the switching between the fundamental and the excited transverse modes. As a conclusion, the onset of the multi-mode regime is shown to result from a combination of thermal lensing and gain-guiding mechanisms as well as spatial hole burning.
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on; 10/2008
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ABSTRACT: Polarization stable, wafer-fused 1310 nm VCSELs employing sub-wavelength shallow gratings on their top DBR and emitting 1.5 mW single mode output power in the 20degC-75degC temperature range are demonstrated.
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on; 06/2008
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ABSTRACT: We demonstrate 2-mum wavelength, wafer-fused In(Al)GaAs-InP-AlGaAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting single-mode power of 0.5 mW at room temperature with a threshold current of 4 mA and sidemode suppression ratio of over 30 dB. These devices can be continuously tuned with current by 5 nm without mode hopping, with a tuning rate of 0.31 nm/mA. These features demonstrate the potential of these long wavelength VCSELs for gas sensing and other optical spectroscopy applications.
IEEE Photonics Technology Letters 02/2008; · 2.19 Impact Factor
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ABSTRACT: We demonstrate double wafer-fused 1.3 and 1.5 μm VCSELs showing record high single mode power up to 75°C, as well as polarization stability, modulation speed up to 10 Gb/s, and accurate wavelength selection capabilities.
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on; 06/2007
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ABSTRACT: Room-temperature cavity mode red-shift of about 45nm from the photoluminescence peak is found to be optimal for tradeoff between high modulation bandwidth and good high-temperature performance for InAlGaAs(InP)-AlGaAs fused vertical-cavity surface-emitting lasers (VCSELs) employing tunnel junction carrier injection. Single-mode output power up to 5.4 and 3.1 mW, at 25 degC and 75 degC, respectively, and open eye diagrams exhibiting fall time values close to 40 ps at 10-Gb/s modulation up to at least 70 degC have been obtained for such VCSELs emitting at 1320-nm wavelength
IEEE Photonics Technology Letters 02/2007; · 2.19 Impact Factor
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J. Boucart,
G. Suruceanu,
P. Royo,
V.I. Iakovlev,
A. Syrbu,
A. Caliman, A. Mereuta,
A. Mircea,
C.-A. Berseth,
A. Rudra,
E. Kapon
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ABSTRACT: The development of the 10GBASE-LX4 communication standard for aggregated 10-Gb/s rates feeds the need for low-cost laser sources in the 1275-1350-nm wavelength range operating at modulation rates of 3.125 Gb/s. We present comprehensive characterization of wafer fused vertical-cavity surface-emitting lasers with characteristics that meet the IEEE802.3ae specification for 10GBASE-LX4. These include output power greater than 1.5 mW up to 80degC, wavelength around 1340 nm, single-mode emission and modulation at 3.125 Gb/s, and wide open eyes with rise and fall times below 100 ps up to 70degC
IEEE Photonics Technology Letters 02/2006; · 2.19 Impact Factor
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ABSTRACT: High-performance vertical-cavity surface-emitting lasers (VCSELs) emitting in the 1310-nm waveband are fabricated by bonding AlGaAs-GaAs distributed Bragg reflectors on both sides of a InP-based cavity. A 2-in wafer bonding process is optimized to produce very good on-wafer device parameter uniformity. Carrier injection is implemented via double intracavity contact layers and a tunnel junction. A 1.2-mW single-mode output power is obtained in the temperature range of 20°C-80°C. Modulation capability at 3.2 Gb/s is demonstrated up to 70°C. Overall VCSEL performance complies with the requirements of the 10 GBASE-LX4 IEEE.802.3ae standard, which opens the way for novel applications of VCSELs emitting in the 1310-nm band.
IEEE Photonics Technology Letters 06/2005; · 2.19 Impact Factor
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ABSTRACT: Wafer fused InGaAlAs/AlGaAs VCSEL emitting in the vicinity of 1325 nm with InAlGaAs-based tunnel junction injection show record high 1.2 mW single mode output and 40 dB side-mode suppression ratio in the 20-80°C temperature range and. good on-wafer device parameter uniformity.
Optical Fiber Communication Conference, 2005. Technical Digest. OFC/NFOEC; 04/2005
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A. Syrbu,
V. Iakovlev,
G. Suruceanu,
A. Caliman,
A. Rudra,
A. Mircea, A. Mereuta,
S. Tadeoni,
C.-A. Berseth,
M. Achtenhagen,
J. Boucart,
E. Kapon
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ABSTRACT: We demonstrate widely tunable InAlGaAs-InP-AlGaAs-GaAs optically pumped vertical-cavity surface-emitting lasers operating in the 1.55-μm waveband. The tuning range of 32 nm is achieved by applying a low tuning voltage of 4 V. Maximum single-mode output power of 2 mW with less than 1.5-dB power variation over the whole tuning range and side-mode suppression ratio in excess of 30 dB have been obtained.
IEEE Photonics Technology Letters 10/2004; · 2.19 Impact Factor
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ABSTRACT: We demonstrate 1.5-μm waveband wafer-fused InGaAlAs-InP-AlGaAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting high single-mode power of 1.5 mW at room temperature with sidemode suppression ratio of over 30 dB and a full-width at half-maximum far field angle of 9°. These devices have thermal resistance value below 1.5 K/mW and are emitting 0.2 mW at 70°C. VCSELs with a wavelength span of 40-nm emission are produced from the same active cavity material, which shows the potential of realizing multiple-wavelength VCSEL arrays.
IEEE Photonics Technology Letters 06/2004; · 2.19 Impact Factor
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ABSTRACT: Wafer-fused InGaAlAs/AlGaAs vertical cavity surface emitting lasers with InAlGaAs-based tunnel junction injection have shown record high 0.7 mW singlemode output power in the 10-80°C temperature range. Single transverse-mode operation with 35 dB sidemode suppression and low divergence beam with 9° half width at half maximum has been measured on devices with 7 μm aperture.
Electronics Letters 04/2004; · 0.96 Impact Factor
