Measurement of ionizing radiation using carbon nanotube field effect transistor.

Department of Chemistry, Stanford University, Stanford, CA 94305, USA.
Physics in Medicine and Biology (Impact Factor: 2.92). 03/2005; 50(3):N23-31. DOI: 10.1088/0031-9155/50/3/N02
Source: PubMed

ABSTRACT Single-walled carbon nanotubes (SWNTs) are a new class of highly promising nanomaterials for future nano-electronics. Here, we present an initial investigation of the feasibility of using SWNT field effect transistors (SWNT-FETs) formed on silicon-oxide substrates and suspended FETs for radiation dosimetry applications. Electrical measurements and atomic force microscopy (AFM) revealed the intactness of SWNT-FET devices after exposure to over 1 Gy of 6 MV therapeutic x-rays. The sensitivity of SWNT-FET devices to x-ray irradiation is elucidated by real-time dose monitoring experiments and accumulated dose reading based on threshold voltage shift. SWNT-FET devices exhibit sensitivities to x-rays that are at least comparable to or orders of magnitude higher than commercial MOSFET (metal-oxide semiconductor field effect transistor) dosimeters and could find applications as miniature dosimeters for microbeam profiling and implantation.

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    Journal of Applied Physics 02/2013; 113(8). DOI:10.1063/1.4792231 · 2.19 Impact Factor
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    12/2013; 2(4):332-367. DOI:10.3390/electronics2040332


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