Article

Phase evolution of solitonlike optical pulses during excitonic Rabi flopping in a semiconductor.

Max-Planck-Institut für Festkörperforschung, 70569 Stuttgart, Germany.
Physical Review Letters (impact factor: 7.37). 03/2005; 94(5):057406. pp.057406
Source: PubMed

ABSTRACT We demonstrate that the temporal pulse phase remains essentially unaltered before separate phase characteristics are developed when propagating high-intensity pulses coherently on the exciton resonance of an optically thick semiconductor. This behavior is a clear manifestation of self-induced transmission and pulse breakup into soliton-like pulses due to Rabi flopping of the carrier density. Experiments using a novel fast-scan cross-correlation frequency-resolved optical gating (XFROG) method are in good agreement with numerical calculations based on the semiconductor Bloch equations.

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Keywords

carrier density
 
clear manifestation
 
exciton resonance
 
novel fast-scan cross-correlation frequency-resolved optical gating
 
optically thick semiconductor
 
propagating high-intensity pulses coherently
 
Rabi flopping
 
semiconductor Bloch equations
 
separate phase characteristics