Emergency endovascular repair of ruptured pseudo-aneurysm at the site of a corrected aortic coarctation.
Division of Cardiovascular Medicine, Ospedale San Giovanni (EOC), CH-6500 Bellinzona, Switzerland.European Heart Journal (Impact Factor: 14.1). 03/2006; 27(3):257. DOI:10.1093/eurheartj/ehi522
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ABSTRACT: A framework for a reliability simulation tool to assess the hot-carrier-induced degradation of MOS circuits is presented, and the major components of this framework are examined. A method is introduced for dynamic simulation of hot-carrier-induced transistor degradation within the circuit environment. The approach accounts for the gradual degradation of terminal voltage waveforms of MOS transistors during long-term operation. It is demonstrated that the estimation of individual device lifetimes is not sufficient for circuit reliability assessment. The critical transistors that are most likely to cause circuit performance failures are identified by combining the long-term degradation estimates with the corresponding circuit performance sensitivitiesComputer Design: VLSI in Computers and Processors, 1989. ICCD '89. Proceedings., 1989 IEEE International Conference on; 11/1989
- Texas Heart Institute journal / from the Texas Heart Institute of St. Luke's Episcopal Hospital, Texas Children's Hospital 02/2008; 35(2):220-1. · 0.67 Impact Factor
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