Stimulated Terahertz Stokes Emission of Silicon Crystals Doped with Antimony Donors

Delft University of Technology, Delft, South Holland, Netherlands
Physical Review Letters (Impact Factor: 7.51). 02/2006; 96(3):037404. DOI: 10.1103/PhysRevLett.96.037404
Source: PubMed


Stimulated Stokes emission has been observed from silicon crystals doped by antimony donors when optically excited by radiation from a tunable infrared free electron laser. The photon energy of the emission is equal to the pump photon energy reduced by the energy of the intervalley transverse acoustic (TA) g phonon in silicon (approximately 2.92 THz). The emission frequency covers the range of 4.6-5.8 THz. The laser process occurs due to a resonant coupling of the 1s(E) and 1s(A1) donor states (separation approximately 2.97 THz) via the g-TA phonon, which conserves momentum and energy within a single impurity center.

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