Nonfluorinated volatile copper(I) 1,3-diketiminates as precursors for Cu metal deposition via atomic layer deposition

Central Research and Development, DuPont Company, Experimental Station, Wilmington, Delaware 19880-0328, USA.
Inorganic Chemistry (Impact Factor: 4.79). 11/2006; 45(21):8480-2. DOI: 10.1021/ic061016e
Source: PubMed

ABSTRACT Novel nonfluorinated Cu(diketiminate)L complexes with L = neutral olefinic ligand have been prepared as stable, volatile Cu(I) precursors for the deposition of copper films by an atomic layer deposition (ALD) process. Among them, the complexes of 4-a and 5-a are the most volatile and stable at low temperature (55 degrees C). A clean, conformal copper film was deposited at 120 degrees C in an ALD process. These Cu(I) complexes are the first examples of nonfluorinated copper(I) diketiminates that can be readily applied to an industrial microelectronic fabrication process.

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