Nonfluorinated volatile copper(I) 1,3-diketiminates as precursors for Cu metal deposition via atomic layer deposition.

Central Research and Development, DuPont Company, Experimental Station, Wilmington, Delaware 19880-0328, USA.
Inorganic Chemistry (Impact Factor: 4.59). 11/2006; 45(21):8480-2. DOI: 10.1021/ic061016e
Source: PubMed

ABSTRACT Novel nonfluorinated Cu(diketiminate)L complexes with L = neutral olefinic ligand have been prepared as stable, volatile Cu(I) precursors for the deposition of copper films by an atomic layer deposition (ALD) process. Among them, the complexes of 4-a and 5-a are the most volatile and stable at low temperature (55 degrees C). A clean, conformal copper film was deposited at 120 degrees C in an ALD process. These Cu(I) complexes are the first examples of nonfluorinated copper(I) diketiminates that can be readily applied to an industrial microelectronic fabrication process.

1 Bookmark
  • [Show abstract] [Hide abstract]
    ABSTRACT: A new class of functionalized β-diketiminate ligands has been prepared from commercially available reagents. The novel N-aryloxy-β-diketiminate ligand proves to be an excellent ligand to support 4d, 4f and 5f metal ions.
    Dalton Transactions 08/2012; 41(39):11980-3. · 4.10 Impact Factor
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: Atomic layer deposition (ALD) is poised to become one of the dominant technologies for the growth of nanometer-thick conformal films in microelectronics processing. ALD is particularly suited for the deposition of isotropic films on complex topographies under mild conditions and with monolayer control. However, many questions concerning the underlying surface chemistry need to be answered before this film deposition methodology can find widespread use. Here we highlight some recent examples of surface-science studies of ALD processes aimed to provide a basic understanding of that chemistry.
    Journal of Materials Chemistry 01/2008; 18(30). · 6.63 Impact Factor
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: We report the synthesis and characterisation of a new family of copper(i) metal precursors based around alkoxy-N,N'-di-alkyl-ureate ligands, and their subsequent application in the production of pure copper thin films. The molecular structure of the complexes bis-copper(i)(methoxy-N,N'-di-isopropylureate) () and bis-copper(i)(methoxy-N,N'-di-cyclohexylureate)() are described, as determined by single crystal X-ray diffraction analysis. Thermogravimetric analysis of the complexes highlighted complex as a possible copper CVD precursor. Low pressure chemical vapour deposition (LP-CVD) was employed using precursor , to synthesise thin films of metallic copper on ruthenium substrates under an atmosphere of hydrogen (H(2)). Analysis of the thin films deposited at substrate temperatures of 225 °C, 250 °C and 300 °C, respectively, by SEM and AFM reveal the films to be continuous and pin hole free, and show the presence of temperature dependent growth features on the surface of the thin films. Energy dispersive X-ray spectroscopy (EDX), powder X-ray diffraction (PXRD) and X-ray photoelectron spectroscopy (XPS) all show the films to be high purity metallic copper.
    Dalton Transactions 02/2013; · 4.10 Impact Factor