Tunable Fröhlich polarons in organic single-crystal transistors.

Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
Nature Material (Impact Factor: 36.43). 01/2007; 5(12):982-6. DOI: 10.1038/nmat1774
Source: PubMed

ABSTRACT In organic field-effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers--which determines the device performance--has been related to the quality of the organic semiconductor. Recently, it was discovered that the nearby dielectric also has an unexpectedly strong influence. The mechanisms responsible for this influence are not understood. To investigate these mechanisms, we have studied transport through organic single-crystal FETs with different gate insulators. We find that the temperature dependence of the mobility evolves from metallic-like to insulating-like with increasing dielectric constant of the insulator. The phenomenon is accounted for by a two-dimensional Fröhlich polaron model that quantitatively describes our observations and shows that increasing the dielectric polarizability results in a crossover from the weak to the strong polaronic coupling regime. This represents a considerable step forward in our understanding of transport through organic transistors, and identifies a microscopic physical process with a large influence on device performance.

  • [Show abstract] [Hide abstract]
    ABSTRACT: This study presents a promising approach to realize low-voltage (<3V) organic thin-film transistors (OTFTs) exhibiting improved electrical and optical stability. Such device performance results from the use of solution-processed hybrid bilayer gate dielectrics consisting of zirconium dioxide (high-k dielectric) and amorphous fluoropolymer, CYTOP (R) (low-k dielectric). Employing a very thin amorphous fluoropolymer film reduces interfacial defect-states by repelling water molecules and other aqueous chemicals from an organic semiconductor active layer due to the hydrophobic surface-property. The chemically clean interface, stemming from decrease in density of trap states improves all the key device properties such as field-effect mobility, threshold voltage, and subthreshold swing. Furthermore, degradation by electrical bias-stress and photo-induced hysteresis were suppressed in OTFTs employing hybrid bilayer gate dielectrics. (C) 2014 AIP Publishing LLC.
    Applied Physics Letters 07/2014; 105(4):043305. DOI:10.1063/1.4892005 · 3.52 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: Electric field tuning of superconductivity has been a long-standing issue in solid state physics since the invention of the field-effect transistor (FET) in 1960. Owing to limited available carrier density in conventional FET devices, electric-field-induced superconductivity was believed to be possible in principle but impossible in practice. However, in the past several years, this limitation has been overcome by the introduction of an electrochemical concept, and electric-field-induced superconductivity has been realized. In the electric double layer (EDL) formed at the electrochemical interfaces, an extremely high electric field is generated and hence high-density charge carriers sufficient to induce superconductivity exist and are collectively used as a charge accumulation device known as an EDL capacitor. Field-induced superconductivity has been used to establish the relationship between T-c and carrier density and can now be used to search for new superconductors. Here, we review electric-field-induced superconductivity using an FET device, with a particular focus on the latest advances in EDL transistors.
    Journal of the Physical Society of Japan 03/2014; 83(3):032001. DOI:10.7566/JPSJ.83.032001 · 1.48 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: In this study, we have successfully explored the potential of a new bilayer gate dielectric material, composed of Polystyrene (PS), Pluronic P123 Block Copolymer Surfactant (P123) composite thin film and Polyacrylonitrile (PAN) through fabrication of metal insulator metal (MIM) capacitor devices and organic thin film transistors (OTFTs). The conditions for fabrication of PAN and PS-P123 as a bilayer dielectric material are optimized before employing it further as a gate dielectric in OTFTs. Simple solution processable techniques are applied to deposit PAN and PS-P123 as a bilayer dielectric layer on Polyimide (PI) substrates. Contact angle study is further performed to explore the surface property of this bilayer polymer gate dielectric material. This new bilayer dielectric having a k value of 3.7 intermediate to that of PS-P123 composite thin film dielectric (k ∼ 2.8) and PAN dielectric (k ∼ 5.5) has successfully acted as a buffer layer by preventing the direct contact between the organic semiconducting layer and high k PAN dielectric. The OTFT devices based on α,ω-dihexylquaterthiophene (DH4T) incorporated with this bilayer dielectric, has demonstrated a hole mobility of 1.37 × 10−2 and on/off current ratio of 103 which is one of the good values as reported before. Several bending conditions are applied, to explore the charge carrier hopping mechanism involved in deterioration of electrical properties of these OTFTs. Additionally, the electrical performance of OTFTs, which are exposed to open atmosphere for five days, can be interestingly recovered by means of re-baking them respectively at 90 °C.
    Organic Electronics 02/2015; DOI:10.1016/j.orgel.2015.01.029 · 3.68 Impact Factor

Full-text (2 Sources)

Available from
May 23, 2014