Complete composition tunability of InGaN nanowires using a combinatorial approach.

Department of Chemistry, University of California, Berkeley, CA 94720, USA.
Nature Material (Impact Factor: 36.43). 01/2008; 6(12):951-6. DOI: 10.1038/nmat2037
Source: PubMed

ABSTRACT The III nitrides have been intensely studied in recent years because of their huge potential for everything from high-efficiency solid-state lighting and photovoltaics to high-power and temperature electronics. In particular, the InGaN ternary alloy is of interest for solid-state lighting and photovoltaics because of the ability to tune the direct bandgap of this material from the near-ultraviolet to the near-infrared region. In an effort to synthesize InGaN nitride, researchers have tried many growth techniques. Nonetheless, there remains considerable difficulty in making high-quality InGaN films and/or freestanding nanowires with tunability across the entire range of compositions. Here we report for the first time the growth of single-crystalline In(x)Ga(1-x)N nanowires across the entire compositional range from x=0 to 1; the nanowires were synthesized by low-temperature halide chemical vapour deposition and were shown to have tunable emission from the near-ultraviolet to the near-infrared region. We propose that the exceptional composition tunability is due to the low process temperature and the ability of the nanowire morphology to accommodate strain-relaxed growth, which suppresses the tendency toward phase separation that plagues the thin-film community.

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