By using strong optical injection locking, we report resonance frequency enhancement in excess of 100 GHz in semiconductor lasers. We demonstrate this enhancement in both distributed feedback (DFB) lasers and vertical-cavity surface-emitting lasers (VCSELs), showing the broad applicability of the technique and that the coupling Q is the figure-of-merit for resonance frequency enhancement. We have also identified the key factors that cause low-frequency roll-off in injection-locked lasers. By increasing the slave laser's DC current bias, we have achieved a record intrinsic 3-dB bandwidth of 80 GHz in VCSELs.
"The technique of injection locking has been reported by several groups to enhance the modulation bandwidth of laser diodes   ; high-frequency modulation beyond 40 GHz was demonstrated  . External OFB has been shown to be an alternative and cost-effective technique to increase the modulation bandwidth of semiconductor lasers, depending on appropriate choices of the system parameters      . "
[Show abstract][Hide abstract] ABSTRACT: paper presents modeling and simulation on the characteristics of semiconductor laser modulated within a strong optical feedback (OFB-)induced photon-photon resonance over a passband of millimeter (mm) frequencies. Continuous wave (CW) operation of the laser under strong OFB is required to achieve the photon-photon resonance in the mm-wave band. The simulated time-domain characteristics of modulation include the waveforms of the intensity and frequency chirp as well as the associated distortions of the modulated mm-wave signal. The frequency domain characteristics include the intensity modulation (IM) and frequency modulation (FM) responses in addition to the associated relative intensity noise (RIN). The signal characteristics under modulations with both single and two mm-frequencies are considered. The harmonic distortion and the third order intermodulation distortion (IMD3) are examined and the spurious free dynamic range (SFDR) is calculated.
"More specifically, optically injected long wavelength (LW) VCSELs emitting at 1550 nm are very promising devices for use as low-cost optical emitters for applications in optical networks from high-speed sources to optical switching/routing elements. In addition, enhanced modulation bandwidth, as well as reduced chirp and nonlinearities, have recently been reported in injection-locked 1550-nm VCSELs , . Moreover, it is also known that optical injection into multimode lasers leads to complex dynamics between the different modes of the device . "
[Show abstract][Hide abstract] ABSTRACT: We report a first experimental study of the simultaneous temporal and polarization-resolved dynamics of a 1550-nm vertical-cavity surface-emitting laser (VCSEL) subject to orthogonally polarized optical injection. A novel technique is used to reveal the behavior of both polarizations at the VCSEL's output. In general, the same type of dynamics can be seen in both polarizations of the fundamental transverse mode but with unequal intensity/modulation depth. We show that both polarizations exhibit period one and chaotic dynamics and reveal antiphase dynamics. These results offer promise for the development of dual-channel, anticorrelated periodic and chaotic-signal generators with a single VCSEL for use as oscillators or chaotic sources in present and future optical networks.
"A device that has 1) high-speed operation capability, 2) high output power for compensating the coupling and transmission loss to meet receiver sensitivity requirements, and 3) DWDM compatibility is therefore highly desirable. Optical injection-locking (OIL) has been recently demonstrated to be an effective method for enhancing the resonant frequency beyond 100 GHz  and increasing the link gain. The large-signal modulation results above 10 Gb/s, however, are still missing, which can be due to the strong injection power requirements accompanied with practical limitations such as heating and gain compression, and therefore limits the performance of large-signal modulation. "
[Show abstract][Hide abstract] ABSTRACT: We propose a three-terminal device based on an optical injection-locked photonic crystal laser to achieve high-speed off-chip interconnection to meet future network-on-chip needs. 40 Gb/s large-signal direct modulation and more than three times bandwidth enhancement are demonstrated. OCIS codes: (230.5298) Photonic crystals; (140.3520) Lasers, injection-locked; (140.3948) Microcavity devices
Conference on Lasers and Electro-Optics (CLEO); 05/2011
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