Strong optical injection-locked semiconductor lasers demonstrating>100-GHz resonance frequencies and 80-GHz intrinsic bandwidths. Opt Express

Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, California 94720, USA.
Optics Express (Impact Factor: 3.49). 05/2008; 16(9):6609-18. DOI: 10.1364/OE.16.006609
Source: PubMed


By using strong optical injection locking, we report resonance frequency enhancement in excess of 100 GHz in semiconductor lasers. We demonstrate this enhancement in both distributed feedback (DFB) lasers and vertical-cavity surface-emitting lasers (VCSELs), showing the broad applicability of the technique and that the coupling Q is the figure-of-merit for resonance frequency enhancement. We have also identified the key factors that cause low-frequency roll-off in injection-locked lasers. By increasing the slave laser's DC current bias, we have achieved a record intrinsic 3-dB bandwidth of 80 GHz in VCSELs.

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    • "Improving the modulation bandwidth of semiconductor lasers has received much attention for applications in dense-information transmission technologies, such as the broadband radio-over-fiber (RoF) networks. Several schemes have been applied to increase the modulation bandwidth of the semiconductor laser, including multiple quantum-well structures [1], optical injection locking [2] [3], and modulation integration [4]. Another efficient technique is the OFB induced by coupling (or integrating) the laser to an ultra-short external cavity. "
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    ABSTRACT: We present modeling on the evaluation of the modulation performance of semiconductor laser coupled with an ultra-short external cavity in terms of the intensity modulation (IM) response, relative intensity noise (RIN), carrier to noise ratio (CNR),and frequency chirp. The modulation is characterized along the period-doubling (PD) route to chaos induced by optical feedback (OFB). We focus on the possibility of increasing the modulation bandwidth by improving the carrier–photon resonance (CPR) frequency or inducing resonant modulation due to photon–photon resonance (PPR). We show that along the route to chaos, OFB could increase the CPR frequency and improve the 3dB-modulation bandwidth from 19 GHz to 28GHz. When strong OFB keeps the continuous wave (CW) operation or induces periodic oscillation (PO), PPR becomes significant and reveals resonance modulation over mm-frequency passband exceeding 50 GHz. Both CNR and frequency chirp are also enhanced around the CPR and PPR frequencies. The highest CNR peak is obtained when modulating the CW or PO laser ,where as the maximum peak of chirp corresponds to non-modulated chaotic laser.
    Optics Communications 02/2016; 360:52-60. DOI:10.1016/j.optcom.2015.10.028 · 1.45 Impact Factor
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    • "The technique of injection locking has been reported by several groups to enhance the modulation bandwidth of laser diodes [6] [7] [8]; high-frequency modulation beyond 40 GHz was demonstrated [9] [10]. External OFB has been shown to be an alternative and cost-effective technique to increase the modulation bandwidth of semiconductor lasers, depending on appropriate choices of the system parameters [11] [12] [13] [14] [15] [16]. "
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    ABSTRACT: paper presents modeling and simulation on the characteristics of semiconductor laser modulated within a strong optical feedback (OFB-)induced photon-photon resonance over a passband of millimeter (mm) frequencies. Continuous wave (CW) operation of the laser under strong OFB is required to achieve the photon-photon resonance in the mm-wave band. The simulated time-domain characteristics of modulation include the waveforms of the intensity and frequency chirp as well as the associated distortions of the modulated mm-wave signal. The frequency domain characteristics include the intensity modulation (IM) and frequency modulation (FM) responses in addition to the associated relative intensity noise (RIN). The signal characteristics under modulations with both single and two mm-frequencies are considered. The harmonic distortion and the third order intermodulation distortion (IMD3) are examined and the spurious free dynamic range (SFDR) is calculated.
    10/2014; 2014. DOI:10.1155/2014/728458
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    • "More specifically, optically injected long wavelength (LW) VCSELs emitting at 1550 nm are very promising devices for use as low-cost optical emitters for applications in optical networks from high-speed sources to optical switching/routing elements. In addition, enhanced modulation bandwidth, as well as reduced chirp and nonlinearities, have recently been reported in injection-locked 1550-nm VCSELs [9], [10]. Moreover, it is also known that optical injection into multimode lasers leads to complex dynamics between the different modes of the device [11]. "
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    ABSTRACT: We report a first experimental study of the simultaneous temporal and polarization-resolved dynamics of a 1550-nm vertical-cavity surface-emitting laser (VCSEL) subject to orthogonally polarized optical injection. A novel technique is used to reveal the behavior of both polarizations at the VCSEL's output. In general, the same type of dynamics can be seen in both polarizations of the fundamental transverse mode but with unequal intensity/modulation depth. We show that both polarizations exhibit period one and chaotic dynamics and reveal antiphase dynamics. These results offer promise for the development of dual-channel, anticorrelated periodic and chaotic-signal generators with a single VCSEL for use as oscillators or chaotic sources in present and future optical networks.
    IEEE Photonics Journal 06/2011; 3(3):555-563. DOI:10.1109/JPHOT.2011.2158636 · 2.21 Impact Factor
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