Asymmetric Double Quantum Wells with Smoothed Interfaces

Central European Journal of Physics (Impact Factor: 1.09). 08/2012; 10(2):459-469. DOI: 10.2478/s11534-011-0108-2
Source: arXiv


We have derived and analyzed the wavefunctions and energy states for an
asymmetric double quantum wells, broadened due to static interface disorder
effects, within well known discreet variable representation approach for
solving the one-dimensional Schrodinger equation. The main advantage of this
approach is that it yields the energy eigenvalues and the eigenvectors in
semiconductor nanostructures of different shapes as well as the strengths of
the optical transitions between them. We have found that interface broadening
effects change and shift energy levels to higher energies, but the resonant
conditions near an energy coupling regions do not strongly distorted. A
quantum-mechanical calculations based on the convolution method (smoothing
procedure) of the influence of disorder on the motion of free particles in
nanostructures is presented.

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Available from: Vladimir Gavryushin,
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    ABSTRACT: An efficient model is proposed to evaluate the impact of interface grading on the properties of semiconductor heterostructures. In the plane-wave approximation, the interface grading is taken into account by simply multiplying the Fourier components of the potential by a Gaussian function, which results only in a very small increase of the computation time. We show that the interface grading may affect the transition energies, the field strength for resonant coupling of subbands, and even the miniband formation in complex systems such as quantum-cascade lasers. This model provides a convenient tool for the incorporation of interface grading into the design of heterostructures.
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