Article

Planar optical waveguides in Bi4Ge3O12 crystal fabricated by swift heavy-ion irradiation.

School of Physics, Key Laboratory of Particle Physics and Particle Irradiation (MOE) and State Key Laboratory of Crystal Materials, Shandong University, Jinan, China.
Applied Optics (Impact Factor: 1.69). 12/2011; 50(36):6678-81. DOI: 10.1364/AO.50.006678
Source: PubMed

ABSTRACT We report on the fabrication of the planar waveguides in Bi4Ge3O12 crystal by using 17 MeV C5+ or O5+ ions at a fluence of 2×10(14) ions/cm2. The reconstructed refractive index profiles of the waveguides produced by either C5+ or O5+ irradiation are the "well" + "barrier" pattern distribution. The two-dimensional modal profiles of the planar waveguides, measured by using the end-coupling arrangement, are in good agreement with the simulated modal distributions. After thermal annealing treatment at 260 °C for 30 min, the propagation loss for C5+ and O5+ irradiated waveguides could be reduced down to ~1.1 and ~4.8 dB/cm, respectively, which exhibit acceptable guiding qualities for potential applications in integrated optics.

0 Bookmarks
 · 
103 Views
  • [Show abstract] [Hide abstract]
    ABSTRACT: Ion implantation proved to be a universal technique for producing waveguides in most optical materials. Tellurite glasses are good hosts of rare-earth elements for the development of fibre and integrated optical amplifiers and lasers covering all the main telecommunication bands. Er3+-doped tellurite glasses are good candidates for the fabrication of broadband amplifiers in wavelength division multiplexing around 1.55 μm, as they exhibit large stimulated cross sections and broad emission bandwidth. Fabrication of channel waveguides in such a material via N+ ion implantation was reported recently. Sillenite type Bismuth Germanate (BGO) crystals are good nonlinear optical materials. Parameters of waveguide fabrication in both materials via implantation of MeV-energy N+ ions were optimized. First single-energy implantations at 3.5 MeV at various fluences were applied. Waveguide operation up to 1.5 μm was observed in both materials. Then double-energy implantations at a fixed upper energy of 3.5 MeV and lower energies between 2.5 and 3.1 MeV were performed to suppress leaky modes by increasing barrier width. Improvement of waveguide characteristics was found by m-line spectroscopy and spectroscopic ellipsometry.
    Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 07/2013; 307:299–304. · 1.19 Impact Factor
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: The optical waveguides in Bi<sub>4</sub>Ge<sub>3</sub>O<sub>12</sub> (BGO) crystals in both depressed-cladding and dual-line configurations have been produced using femtosecond-laser micromachining. The guiding properties and thermal stabilities of the BGO waveguides have been investigated for both geometries, showing different performance of the fabricated structures. Both depressed-cladding and dual-line waveguides support guidance along both TE and TM polarizations. Thermal annealing treatments up to 600°C reduce the propagation loss of dual-line waveguides to as low as 0.5 dB/cm, while the cladding waveguide is only stable under thermal treatment not higher than 260°C, reaching a propagation loss of 2.1 dB/cm.
    Applied Optics 06/2013; 52(16):3713-8. · 1.69 Impact Factor