A New Route toward Semiconductor Nanospintronics: Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions

Institute for Solid State Physics, Jena University, Max-Wien-Platz 1, 07743 Jena, Germany.
Nano Letters (Impact Factor: 13.59). 08/2011; 11(9):3935-40. DOI: 10.1021/nl2021653
Source: PubMed


We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance measurements showed a decrease at low temperatures, indicating paramagnetism. Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system.

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    • "In general, the annealing temperature ordinarily keeps at two thirds of the melting point of the implanted materials [18]. Lately, Borschel et al. [19] reported that GaAs nanowires implanted by Mn+ at 250°C remained as single crystalline. However, polycrystalline nanowires were acquired after implantation at room temperature with subsequent annealing. "
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