Silicon-on-insulator polarization splitting and rotating device for polarization diversity circuits

School for Information and Optoelectronic Science and Engineering, South China Normal University, 510006 Guangzhou, China.
Optics Express (Impact Factor: 3.53). 06/2011; 19(13):12646-51. DOI: 10.1364/OE.19.012646
Source: PubMed

ABSTRACT A compact and efficient polarization splitting and rotating device built on the silicon-on-insulator platform is introduced, which can be readily used for the interface section of a polarization diversity circuit. The device is compact, with a total length of a few tens of microns. It is also simple, consisting of only two parallel silicon-on-insulator wire waveguides with different widths, and thus requiring no additional and nonstandard fabrication steps. A total insertion loss of -0.6 dB and an extinction ratio of 12 dB have been obtained experimentally in the whole C-band.

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Available from: Yunhong Ding, Oct 27, 2014
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