Article

Effect of the substitution pattern of alkyl side chain in a benzodithiophene core π-system on intra and inter-molecular charge carrier mobility.

Department of Applied Chemistry, Faculty of Engineering, Osaka University, Suita, Osaka, Japan.
The Journal of Physical Chemistry B (impact factor: 3.7). 06/2011; 115(26):8446-52. DOI:10.1021/jp2036668 pp.8446-52
Source: PubMed

ABSTRACT 3,7-Didocecyl-2,6-di(5-phenylthiophen-2-yl)benzo[1,2-b:3,4-b']dithiophene (1) and its 4,8-didodecyl isomer 2 were prepared as the representative soluble X- and cross-shaped π-conjugated oligomer systems to provide insight into the effect of the substitution pattern of the alkyl side chain on electronic properties. The absorption and emission spectra as well as CV data showed the relatively longer effective conjugation of cross-shaped 2. The intrinsic charge-carrier mobilities were then estimated by flash-photolysis time-resolved microwave conductivity (FP-TRMC) method and compared with their top contact FET properties. It was found that, although the TRMC method showed the higher mobility of 2 than 1, the FET performance of 1 after appropriate conditioning and thermal annealing was superior to that of 2. The effective conjugation of cross-shaped 2 is well reflected in the intramolecular mobility of positive holes estimated by FP-TRMC, showing striking contrast to the rather higher mobility of X-shaped 1 observed by FET as well as TOF measurements as the long-range translational motion of the carriers. This strongly suggests that the intermolecular packing of these compounds plays a significant role in the range of hole mobility of <∼10(-2) cm(2) V(-1) s(-1).

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Keywords

4,8-didodecyl isomer 2
 
alkyl side chain
 
appropriate conditioning
 
compounds
 
CV data
 
effective conjugation
 
FET
 
FET performance
 
flash-photolysis time-resolved microwave conductivity
 
hole mobility
 
intrinsic charge-carrier mobilities
 
long-range translational motion
 
positive holes
 
representative soluble X-
 
significant role
 
striking contrast
 
substitution pattern
 
top contact FET properties
 
TRMC method
 
X-shaped 1