Article

# Metallic Transport in a Monatomic Layer of In on a Silicon Surface

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Department of Physics, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan.
(Impact Factor: 7.51). 03/2011; 106(11):116802. DOI: 10.1103/PhysRevLett.106.116802
Source: PubMed

ABSTRACT We have succeeded in detecting metallic transport in a monatomic layer of In on an Si(111) surface, Si(111)-sqrt[7]×sqrt[3]-In surface reconstruction, using the micro-four-point probe method. The In layer exhibited conductivity higher than the minimum metallic conductivity (the Ioffe-Regel criterion) and kept the metallic temperature dependence of resistivity down to 10 K. This is the first example of a monatomic layer, with the exception of graphene, showing metallic transport without carrier localization at cryogenic temperatures. By introducing defects on this surface, a metal-insulator transition occurred due to Anderson localization, showing hopping conduction.

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Available from: Yukio Hasegawa, Aug 24, 2015
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• ". However, despite the fact that the phase diagram for positive temperatures in Celsius scale and coverages up to 1 ML was presented as early as in 1979 [4], the system is constantly being studied and it seems that some observations still remain unclear. Of particular interest are atomic models for those structures [5] [6] [7] [8] and the nature of In-covered Si surfaces [9] [10]. One of the very interesting phases which was widely studied in 1990s [3] [11] is the √ 7 × √ 3 structure. "
##### Article: Low coverage Si(1 1 1)√7 ×√3–In reconstruction:Deposition rate effectMarta
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ABSTRACT: tSi(1 1 1)–In surface reconstructions for submonolayer coverages were investigated at room temperatureusing X-ray photoelectron spectroscopy, Auger electron spectroscopy and low-energy electron diffrac-tion. Deposition rate influence on the formation of surface structures is reported. It was observed that forsufficiently low deposition rate and certain annealing process Si(1 1 1)√7 ×√3–In surface reconstructionat coverage as low as 0.2 ML is present.
Applied Surface Science 03/2014; 304:103-106. DOI:10.1016/j.apsusc.2014.03.063 · 2.54 Impact Factor
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ABSTRACT: The conductivity of a silicon substrate with a Si(111) $\sqrt {21}$ × $\sqrt {21}$ -(Au, Ag) surface phase is studied. It is found that the surface conductivity of such a substrate varies depending on the ratio of the amounts of gold and silver in the given structure. An analysis of the behavior of the Si(111) $\sqrt {21}$ × $\sqrt {21}$ -(Au, Ag) surface conductivity during silver adsorption indicates the effect of a space-charge layer in the surface region of the substrate on the measurement results.
Semiconductors 06/2013; 47(6). DOI:10.1134/S1063782613060298 · 0.71 Impact Factor
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##### Article: Macroscopic Superconducting Current through a Silicon Surface Reconstruction with Indium Adatoms: Si(111)-(R7$\times$R3)-In
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ABSTRACT: Macroscopic and robust supercurrents are observed by direct electron transport measurements on a silicon surface reconstruction with In adatoms (Si(111)-(R7xR3)-In). The superconducting transition manifests itself as an emergence of the zero resistance state below 2.8 K. $I-V$ characteristics exhibit sharp and hysteretic switching between superconducting and normal states with well-defined critical and retrapping currents. The two-dimensional (2D) critical current density $J_\mathrm{2D,c}$ is estimated to be as high as $1.8 \ \mathrm{A/m}$ at 1.8 K. The temperature dependence of $J_\mathrm{2D,c}$ indicates that the surface atomic steps play the role of strongly coupled Josephson junctions.
Physical Review Letters 11/2011; 107(20):207001. DOI:10.1103/PhysRevLett.107.207001 · 7.51 Impact Factor