Ovarian reserve and oocyte maturity in women with malignancy undergoing in vitro maturation treatment.
ABSTRACT To evaluate ovarian reserve and oocyte maturity in women with malignancy.
A case-control study.
University teaching hospital.
We evaluated all women with malignancy who underwent in vitro maturation treatment for fertility preservation from the year 2003 to 2009. The results were compared with those of an age-matched infertile control group.
In vitro maturation treatment.
Ovarian reserve and oocyte maturity.
Women with malignancy of the breast (n = 87), hematologic malignancy (n = 16), gynecologic or abdominal malignancy (n = 9), and other malignancies (n = 16) were compared with infertile control women (n = 79). The age was similar in all groups except in women with hematologic malignancy where they were younger than the control group (24.9 ± 1.1 years vs. 30.8 ± 0.4 years, confidence interval 4.0-9.5). Baseline FSH in this group was also lower than in the control group. Women with breast cancer had a lower number of retrieved oocytes than the control group (95% confidence interval 0-5). There were no significant differences in antral follicle count, percentage of mature oocytes on collection day, and percentage of metaphase II oocytes matured in vitro among all groups of women.
Women with breast cancer have fewer numbers of retrieved oocytes than infertile controls. Ovarian reserve and oocyte maturity in other types of malignancy are similar to those in the control group.
Conference Proceeding: An analytical high frequency noise model for hot-carrier stressed MOSFETs[show abstract] [hide abstract]
ABSTRACT: This paper proposes a hot-carrier stressed high frequency noise model for MOSFETs. By analytical method, a new fresh and post-stress high-frequency MOSFET noise model is developed, this model incorporates the effects of gate resistance, gate-induced current noise and nonlocal channel carrier heating, it can be used to calculate the minimum noise figure F<sub>run</sub>, optimized source admittance Y<sub>opt</sub>, and equivalent noise resistance R<sub>n</sub> and admittance G<sub>i</sub>. Within this model, the effects of hot-carrier stress induced interface states on the high-frequency noise performance can be evaluated. Modeling shows agreement with the measured data.Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on; 11/2004