Article

Structure and luminescence evolution of annealed Europium-doped silicon oxides films.

State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, People's Republic of China.
Optics Express (impact factor: 3.59). 12/2010; 18(26):27191-6. pp.27191-6
Source: PubMed

ABSTRACT Europium (Eu)-doped silicon oxide films with Eu concentrations from 2.1 to 4.7 at. % were deposited by electron beam evaporation. The Eu related luminescence from the films was found to be sensitive to the evolution of film microstructures at different annealing temperatures. Luminescence centers in the films changed from defects of silicon oxides to 4f(6)5d-4f(7)(8S(7/2)) transition of Eu2+ after the films annealed in N2 at temperature higher than 800 °C. The evolution of luminescence centers was attributed to the formation of europium silicate (EuSiO3), which was confirmed by x-ray photoelectron spectroscopy, x-ray diffraction, time resolved photoluminescence, and transmission electron microscopy.

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Keywords

different annealing temperatures
 
electron beam evaporation
 
Eu)-doped silicon oxide films
 
Europium
 
europium silicate
 
EuSiO3
 
film microstructures
 
films
 
films annealed
 
luminescence
 
luminescence centers
 
photoluminescence
 
temperature higher
 
transmission electron microscopy
 
x-ray diffraction
 
x-ray photoelectron spectroscopy
 

Dongsheng Li