Article

11 W single gain-chip dilute nitride disk laser emitting around 1180 nm

Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, Tampere, 33720 Finland.
Optics Express (Impact Factor: 3.53). 12/2010; 18(25):25633-41. DOI: 10.1364/OE.18.025633
Source: PubMed

ABSTRACT We report power scaling experiments of a GaInNAs/GaAs-based semiconductor disk laser operating at ~1180 nm. Using a single gain chip cooled to mount temperature of ~10 °C we obtained 11 W of output power. For efficient thermal management we used a water-cooled microchannel mount and an intracavity diamond heat spreader. Laser performance was studied using different spot sizes of the pump beam on the gain chip and different output couplers. Intracavity frequency-doubling experiments led to generation of ~6.2 W of laser radiation at ~590 nm, a wavelength relevant for the development of sodium laser guide stars.

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