11 W single gain-chip dilute nitride disk laser emitting around 1180 nm

Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, Tampere, 33720 Finland.
Optics Express (Impact Factor: 3.53). 12/2010; 18(25):25633-41. DOI: 10.1364/OE.18.025633
Source: PubMed

ABSTRACT We report power scaling experiments of a GaInNAs/GaAs-based semiconductor disk laser operating at ~1180 nm. Using a single gain chip cooled to mount temperature of ~10 °C we obtained 11 W of output power. For efficient thermal management we used a water-cooled microchannel mount and an intracavity diamond heat spreader. Laser performance was studied using different spot sizes of the pump beam on the gain chip and different output couplers. Intracavity frequency-doubling experiments led to generation of ~6.2 W of laser radiation at ~590 nm, a wavelength relevant for the development of sodium laser guide stars.

  • [Show abstract] [Hide abstract]
    ABSTRACT: Optically pumped quantum dot (QD)-based semiconductor disk lasers (SDLs) have been under intense research after their first demonstration and important enhancements of their parameters have been achieved since then. In this paper, we present recent developments in QD-based SDLs emitting in the 1-1.3 μm spectral region. Three different wavelength ranges of 1040, 1180, and 1260 nm were explored. Power scaling up to 6 W was achieved for 1040 and 1180 nm devices and up to 1.6 W for 1260 nm device. New spectral regions were covered by direct emission and frequency doubling was used to demonstrate spectral conversion into visible region with green, orange, and red light. Also, the broad gain bandwidth of QD materials was explored and wavelength tuneability up to 60 nm around 1040 nm, 69 nm around 1180 nm, and 25 nm around 1260 nm was demonstrated. The efficiency of excited and ground state emission in QDs was also compared. All these improvements allow new possibilities in applications of QD SDLs, reveal their potential, and suggest the aims for future research in the field.
    IEEE Journal of Selected Topics in Quantum Electronics 11/2011; 17(6):1763-1771. DOI:10.1109/JSTQE.2011.2112638 · 3.47 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: We review our results concerning the development of Semiconductor Disk Lasers with emission wavelength in the range of 1100-1200 nm. In particular, we highlight our recent demonstrations of SDLs with an output power of more than 20 W for emission around 1180 nm and corresponding frequency doubled power of more than 10 W at around 589 nm. The SDL gain chips utilize either dilute nitride (GaInNAs) or low-temperature GaInAs quantum wells.
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on; 01/2013
  • [Show abstract] [Hide abstract]
    ABSTRACT: The temperature performance of GaInNAs-GaInAs multi-quantum-well active ridge waveguides, patterned with a periodic one-dimensional grating and a defective region placed in the central layer, has been evaluated to design efficient optical active switches/modulators at the operation wavelength λ= 1.289 μm. At environmental temperature T = 298 K, by properly designing the periodic grating and changing the injected current from IOFF = 0 to ION = 11 mA, efficient switching characteristics occur in terms of crosstalk, contrast ratio, modulation depth and bandwidth. The proposed modulator preserves these high switching performances even over a wide temperature range. As an example, in the ON state we have verified that the transmittance TON assumes values within the range 3.2-3.6 for temperature values ranging from T = 298 K to T = 320 K, whereas TON reduces to about 2.0 by increasing the temperature up to T = 400 K. Moreover, the full width at half maximum increases from FWHM ≅ 0.91 nm for T = 298 K to FWHM = 1.15 nm for T = 400 K.
    2014 16th International Conference on Transparent Optical Networks (ICTON); 07/2014