Cu2S-deposited mesoporous NiO photocathode for a solar cell
ABSTRACT The p-type Cu2S layer is deposited onto p-type mesoporous NiO electrode by spray pyrolysis deposition method using alcoholic solution of ethylenediamine-copper(II) complex and thiourea. A solar cell using Cu2S-deposited NiO mesoporous photocathode has been fabricated for the first time. The incident photon to current conversion efficiency (IPCE) values are found to be 0.8-1.8% for the newly designed NiO/Cu2S solar cell. It was shown that the p-type NiO/Cu2S structure could be successfully utilized to fabricate p-type solar cell and the possible mechanism for charge transfer is also discussed. (C) 2009 Published by Elsevier B. V.
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ABSTRACT: We report all solid-state nanostructured inorganic-organic heterojunction solar cells fabricated by depositing Sb(2)S(3) and poly(3-hexylthiophene) (P3HT) on the surface of a mesoporous TiO(2) layer, where Sb(2)S(3) acts as an absorbing semiconductor and P3HT acts as both a hole conductor and light absorber. These inorganic-organic light harvesters perform remarkably well with a maximum incident-photon-to-current efficiency (IPCE) of 80% and power conversion efficiency of 5.13% under air-mass 1.5 global (AM 1.5G) illumination with the intensity of 100 mW cm(-2). These devices are highly stable under room light in air, even without encapsulation. The present findings offer novel directions for achieving high-efficiency solid-state solar cells by hybridization of inorganic-organic light harvesters and hole transporters.Nano Letters 07/2010; 10(7):2609-12. DOI:10.1021/nl101322h · 13.59 Impact Factor
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ABSTRACT: The potential of solution processing to lower the cost of conventional Si-solar cell technologies and contribute to the large-scale deployment of thin-film devices is reviewed. The solvent and additives and conditions such as temperature and pH should be chosen to promote full ink solubility and an ink formulation should be as simple as possible without sacrificing solution stability and final material performance. Flexographic printing is a slightly higher resolution method that relies on a raised image on a printing plate cylinder to transfer the pattern to a surface. Metallic alloy films, including those containing Cu and In, are prepared by annealing a spin-coated film of metal salts in a reducing atmosphere. The development of soluble precursors for thin-film absorber layers, dielectric materials, transparent conductors, and metal contacts, in combination with solution deposition and processing techniques, can be leveraged to prepare fully printed photovoltaic devices.Chemical Reviews 10/2010; 110(11):6571-94. DOI:10.1021/cr100191d · 45.66 Impact Factor
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ABSTRACT: Compact nickel oxide (NiO) thin films were prepared on various substrates via a simple spray pyrolysis technique. Morphological and structural characterization indicates that these NiO films are very uniform in thickness (similar to 100 nm) and possess the bunsenite crystal structure. Optical measurements show that the NiO films are highly transparent with a band gap of 3.70 +/- 0.05 eV. Mott-Schottky plots obtained from electrochemical impedance spectroscopy measurements reveal that the as-deposited NiO on fluorine-doped tin oxide (FTO) glass behaves as a p-type semiconductor. The flat band potential of NiO was estimated to be similar to 0.36 V (vs. NHE) in 0.10 M tetrabutylammonium perchlorate/acetonitrile electrolytes. Cyclic voltammetric measurements of the NiO films on FTO in various redox electrolytes show that electrochemical reactions proceed in the accumulation region but are completely inhibited in the depletion region, indicating the NiO films effectively block the FTO substrate. Using these NiO blocking layers, a CdS-sensitized mesoscopic NiO photocathode operating in a polysulfide electrolyte is unambiguously demonstrated for the first time. It is anticipated that NiO thin films synthesized by spray pyrolysis could find important applications as stable and transparent electron barrier layers for various optoelectronic devices.Journal of The Electrochemical Society 01/2011; 158(7-7):H733-H740. DOI:10.1149/1.3590742 · 2.86 Impact Factor