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# Magnetoresistivity and Acoustoelectronic Effects in a Tilted Magnetic Field in $p$-Si/SiGe/Si Structures with an Anisotropic $g$ Factor

Journal of Experimental and Theoretical Physics (Impact Factor: 0.92). 11/2010; DOI:10.1134/S1063776110090189
Source: arXiv

ABSTRACT Magnetoresistivity $\rho _{xx}$ and $\rho _{xy}$ and the acoustoelectronic effects are measured in $p$-Si/SiGe/Si with an impurity concentration $p$ = 2 $\times$ 10$^{11}$ cm$^{-2}$ in the temperature range 0.3-2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective $g$-factor on the angle of magnetic field tilt $\theta$ to the normal to the plane of a two dimensional $p$-Si/SiGe/Si channel is determined. A first order ferromagnet-paramagnet phase transition is observed in the magnetic fields corresponding to a filling factor $\nu$ = 2 at $\theta \approx$ 59$^\textrm{o}$-60$^\textrm{o}$. Comment: 8 pages, 13 figures

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