Research on High Temperature Cs Activated GaAs Photocathode
ABSTRACT Mechanism about the change of GaAs phtotocathode's surface barrier during Cs activated process was studied. Ionized Cs and p type doping impurity(Be) form a dipole that decreases the vacuum level of GaAs. Generally, Cs activated GaAs photocathode could achieve zero electron affinity state. The quantum yield formula of reflection-mode photocathode has been solved from the 1-dimension continuity equations and the escape probability formula has been solved from the Schrodinger equation. It was found from the formula that the quantum efficiency of Cs activated GaAs photocathode is directly proportional to the electric field intensity of Be- -Cs+ dipole. A Cs activation experiment was carried out, the experiment process tallies with the theory mentioned above and the integral sensitivity of Cs activated GaAs photocathode is 453 microA x lm(-1), which could be inferred as a zero electron affinity state.
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ABSTRACT: Two types of transmission-mode GaAs photocathodes grown by molecular beam epitaxy are compared in terms of activation process and spectral response, one has a gradient-doping structure and the other has a uniform-doping structure. The experimental results show that the gradient-doping photocathode can obtain a higher photoemission capability than the uniform-doping one. As a result of the downward graded band-bending structure, the cathode performance parameters, such as the electron average diffusion length and the surface electron escape probability obtained by fitting quantum yield curves, are greater for the gradient-doping photocathode. The electron diffusion length is within a range of from 2.0 to 5.4 μm for doping concentration varying from 1019 to 1018 cm−3 and the electron average diffusion length of the gradient-doping photocathode achieves 3.2 μm.Chinese Physics B 11/2011; 20(11). DOI:10.1088/1674-1056/20/11/118501 · 1.39 Impact Factor