Article

Charge dissipation layer based on conductive polymer for electron-beam patterning of bulk zinc oxide

Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
Electronics Letters (Impact Factor: 1.04). 08/2010; DOI:10.1049/el.2010.1282
Source: OAI

ABSTRACT The ability of thin conductive polythiophene layers to dissipate electrons in electron-beam lithography (EBL) process on bulk zinc oxide (ZnO) samples is shown. High energy electron-beam exposure of relatively thick (650 nm-thick) hydrogen silsesquioxane (HSQ) negative-type resist deposited on ZnO was investigated for three different cases. In turn, no charge dissipation layer, 40 nm-thick Al and 100 nm-thick conductive polymer layers were used on the top of HSQ resist. A quick and inexpensive processing method with the use of polymer is shown for an EBL exposure of dense and high-resolution patterns in HSQ/ZnO samples

0 0
 · 
1 Bookmark
 · 
134 Views
  • [show abstract] [hide abstract]
    ABSTRACT: A review is given of Ohmic and Schottky contacts to n- and p-type ZnO. It is relatively straightforward to form high-quality Ohmic contacts to n-type ZnO, with specific contacts resistivity in the range 10−6 Ω cm2 even for unnannealed contacts on strongly n-type layers, while recent work has also shown good results (10−5–10−6 Ω cm2) for Au or Ni/Au annealed at 300–600 °C. Schottky contacts to both n- and p-type ZnO are much lower than expected from the metal work function and the electron affinity of ZnO, suggesting that surface states are important in determining the effective barrier height. The Schottky contacts also show poor thermal stability. For transparent transistors based on ZnO, this suggests that oxide gates are more suitable than metal gates.
    Journal of Crystal Growth 01/2006; · 1.55 Impact Factor
  • [show abstract] [hide abstract]
    ABSTRACT: Electron beam lithography has been applied to the fabrication of nanoscale two-dimensional chiral structures with various designs. A fabrication process for planar chiral structures in a thin silicon nitride layer using electron beam lithography and dry etching is presented. A top conductive coating is applied during electron-beam exposure to prevent the occurrence of charging effects caused by the non-conductive silica substrate. Different doses are chosen during the lithography process depending on the complexities and densities of different chiral designs. A very well defined transmission diffraction pattern from arrays of Peano-Gosper fractals is obtained. The optical activity of these dielectric metamaterials shows great potential in their applications of optoelectronic devices and communications.
    Thin Solid Films 01/2007; · 1.60 Impact Factor