Article

# Visible-blind photodetector based on p-i-n junction GaN nanowire ensembles

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Institut d'Electronique Fondamentale, UMR 8622 CNRS, University Paris Sud XI, Orsay, France.
(Impact Factor: 3.82). 08/2010; 21(31):315201. DOI: 10.1088/0957-4484/21/31/315201
Source: PubMed

ABSTRACT

We report the synthesis, fabrication and extensive characterization of a visible-blind photodetector based on p-i-n junction GaN nanowire ensembles. The nanowires were grown by plasma-assisted molecular beam epitaxy on an n-doped Si(111) substrate, encapsulated into a spin-on-glass and processed using dry etching and metallization techniques. The detector presents a high peak responsivity of 0.47 A W(-1) at - 1 V. The spectral response of the detector is restricted to the UV range with a UV-to-visible rejection ratio of 2 x 10(2). The dependence on the incident power and the operation speed of the photodetector are discussed.

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Available from: Andres De Luna Bugallo, Mar 26, 2014
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• "Wide-bandgap materials, such as III-V nitrides, zinic oxide, silicon carbide, diamond, are much more attractive choices for visible-blind UV detection. Their stable physical properties and inherent visible blindness have motivated extensive research by many groups [3]–[6]. Strontium titanate (SrTiO 3 , STO), with a typical perovskite structure, has a wide optical bandgap of 3.2 eV. "
##### Article: High-Performance Ultraviolet Photodetector Based on Polycrystalline SrTiO3 Thin Film
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ABSTRACT: ${\rm SrTiO}_{3}$ (STO) thin film has been fabricated on fused-quartz wafer by radio-frequency magnetron sputtering. The Ag interdigited electrodes were then evaporated on STO thin film in order to form the metal–insulator–metal photoconductive detector. Our photodetector exhibits a high photoresponse in the range of 225–340 nm with an ultraviolet-visible rejection ratio (R310 nm/R400 nm) of two orders of magnitude, indicating an intrinsic characteristic of visible-blindness. The maximum photocurrent responsivity is about 105 mA/W measured at 310 nm and the corresponding quantum efficiency is 42.1%. The dark current is only 0.4 nA at 50 V bias. Furthermore, the STO thin film detector presents a transient photovoltaic signal with a rise time of ${\sim}{\rm 330}~{\rm ps}$ and a fall time of ${\sim}{\rm 480}~{\rm ps}$ under the excitation of a 355-nm-pulsed laser, suggesting an ultrafast response characteristic of our STO thin film detector.
IEEE Sensors Journal 08/2012; 12(8):2561-2564. DOI:10.1109/JSEN.2012.2196429 · 1.76 Impact Factor
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• "One-dimensional nanostructures have brought a large field of new potentialities in many scientific domains such as microelectronics, photovoltaics, sensing … Indeed, due to their small dimensions, they exhibit very special particularities that differ from their corresponding bulk materials, and can be used to realize devices with improved properties. Thus, several research groups have realized 1-D nanostructure-based devices like photodetectors [1], [2], FETs [3], [4], solar cells [5], [6], chemical sensors [7], (…) with 1-D nanostructures as building blocks. Despite these promising marches towards nano-devices, it remains a challenging task to combine high density integration and spatial placement control with simple, cost-effective methods. "
##### Article: A new vertical nanoporous functional structure process fabrication to control one dimensional nanostructure growth
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ABSTRACT: A novel vertical nanoporous structure is reported as a starting point for the fabrication of a fully-surround gate field effect transistor (FET) based on well-ordered nanostructures array. The proposed porous stacking is perfectly suited both for the collective organization of high density (up to 10 11.cm-2) arrays of nanostructures like nanowires (NWs) or nanotubes (NTs), as with calibrated diameters (during growth), as well as for easing the Source, Gate, and Drain electrodes connections for individual or groups of nanostructures. Moreover the unique fully-surround gate architecture enables a quasi-ideal coupling between the gate and the channel, theoretically leading to improved devices performance and reduced global power consumption. In this paper we describe the main steps for this versatile and lithography-free technique to fabricate a multi-layer porous template down to the nanometer scale, as well as the first nanostructures (carbon NTs) growth attempts inside such functional template. We highlight the fact that the proposed porous structure may acts as a passive template for the one-dimensional nanomaterials growth as well as an active element in the future device. The proposed approach is in line with bottom-up fabrication approach to provide smaller devices, and is fully-compatible with classical processes used in the silicon industry.
MRS Online Proceeding Library 01/2012; 1411(1). DOI:10.1557/opl.2012.756
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##### Article: A perspective on nanowire photodetectors: Current status, future challenges, and opportunities
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ABSTRACT: One-dimensional semiconductor nanostructures (nanowires (NWs), nanotubes, nanopillars, nanorods, etc.) based photodetectors (PDs) have been gaining traction in the research community due to their ease of synthesis and unique optical, mechanical, electrical, and thermal properties. Specifically, the physics and technology of NW PDs offer numerous insights and opportunities for nanoscale optoelectronics, photovoltaics, plasmonics, and emerging negative index metamaterials devices. The successful integration of these NW PDs on CMOS-compatible substrates and various low-cost substrates via direct growth and transfer-printing techniques would further enhance and facilitate the adaptation of this technology module in the semiconductor foundries. In this paper, we review the unique advantages of NW-based PDs, current device integration schemes and practical strategies, recent device demonstrations in lateral and vertical process integration with methods to incorporate NWs in PDs via direct growth (nanoepitaxy) methods and transfer-printing methods, and discuss the numerous technical design challenges. In particular, we present an ultrafast surface-illuminated PD with 11.4-ps full-width at half-maximum (FWHM), edge-illuminated novel waveguide PDs, and some novel concepts of light trapping to provide a full-length discussion on the topics of: 1) low-resistance contact and interfaces for NW integration; 2) high-speed design and impedance matching; and 3) CMOS-compatible mass-manufacturable device fabrication. Finally, we offer a brief outlook into the future opportunities of NW PDs for consumer and military application.
IEEE Journal of Selected Topics in Quantum Electronics 1. · 2.83 Impact Factor