Traveling-wave Uni-Traveling Carrier Photodiodes for continuous wave THz generation

UCL Electronic and Electrical Engineering, Torrington Place, London WC1E 7JE, UK.
Optics Express (Impact Factor: 3.49). 05/2010; 18(11):11105-10. DOI: 10.1364/OE.18.011105
Source: PubMed


The design, experimental evaluation and performance of a Traveling-Wave Uni-Traveling Carrier photodiode for Terahertz generation are described and its advantages in terms of frequency response are demonstrated. The device delivered 148 microW at 457 GHz, 24 microW at 914 GHz when integrated with resonant antennas and 105 microW at 255 GHz, 30 microW at 408 GHz, 16 microW at 510 GHz and 10 microW at 612 GHz. Record levels of Terahertz figure of merit (PTHz/Popt2 in W(-1)) were achieved ranging from 1 W(-1) at 110 GHz to 0.0024 W(-1) at 914 GHz.

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Available from: Cyril Renaud, Apr 28, 2015
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    • "integrated two UTC devices on the same chip and their combined power output showed record high power of 1 mW at 300 GHz [17]. To date, the best results in waveguide based devices have been obtained in work when the standard UTC structure was used in combination with an optimized pseudo TW design [18], [19]. The devices were not full travelling wave structures as this can only be achieved in periodic structures. "
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    Journal of Lightwave Technology 01/2014; PP(3-99):1-1. DOI:10.1109/JLT.2014.2355137 · 2.97 Impact Factor
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    • "Terahertz wave generation is an emergent field of interest within MPW due to its potential advantages in material characterization, nondestructive testing, tomography imaging, and chemical or biological sensing. In this context, the European project Integrated photonic millimeter-wave functions for broadband connectivity (IPHOBAC) in relation to the interesting results achieved by consortium members in 2010, such as the development of a waveguide-fed, traveling-wave unitraveling carrier photodiode (TW-UTC-PD) [6], is worthy of mention. This device, integrated with different types of antennas, has been demonstrated as a tunable terahertz source covering frequencies up to 1 THz. "
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    • "Uni-traveling carrier (UTC) and partially depleted absorber (PDA) designs have shown power-handling [1] and bandwidth [2] performances far superior to the best p-i-n detectors. Germanium detectors on silicon are attractive due to their low cost and the high thermal conductivities of Ge and Si, and efforts thus far yielded a p-i-n structure with a 49GHz bandwidth [3] and one with a large-signal compression current of 60mA [4]. "
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