Characterization and thermal analysis of a 48 V GaN HFET device technology for wireless infrastructure applications
Freescale Semicond., Inc., Tempe, AZDOI: 10.1109/MWSYM.2008.4632916 Conference: Microwave Symposium Digest, 2008 IEEE MTT-S International
Source: IEEE Xplore
This report presents the DC, pulsed I-V, small signal, and large signal characteristics of Freescalepsilas 48 V GaN HFET technology. Characterization of large signal performance for a 12.6 mm at 48 V drain bias shows 89 W output power with an associated power density of 7.1 W/mm, linear gain of 17.5 dB, and a power-added efficiency (PAE) of 62%. Analysis of channel temperature over drain bias shows that the maximum channel temperatures at 28 V and 48 V are 107 degC and 245 degC, respectively during saturated RF operation. Data for RF drift over time on a 16.2 mm device show less than 0.2 dB of RF drift for >1000 hrs. of testing. This level of RF performance represents a significant >4 dB gain and >2 W/mm power density improvement over Freescalepsilas previously reported GaN HFET technology.
- [Show abstract] [Hide abstract]
ABSTRACT: The temperature dependence of the access resistances for AlGaN/GaN HEMTs is investigated. The self-heating is measured using infrared microscopy and the access resistances are extracted at different ambient temperatures. Their influence on the intrinsic small signal parameters is studied versus bias and ambient temperature.Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008. Workshop on; 12/2008
Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. The impact factor represents a rough estimation of the journal's impact factor and does not reflect the actual current impact factor. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.