Conference Proceeding

Characterization and thermal analysis of a 48 V GaN HFET device technology for wireless infrastructure applications

Freescale Semicond., Inc., Tempe, AZ
IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium 07/2008; DOI:10.1109/MWSYM.2008.4632916 ISBN: 978-1-4244-1780-3 In proceeding of: Microwave Symposium Digest, 2008 IEEE MTT-S International
Source: IEEE Xplore

ABSTRACT This report presents the DC, pulsed I-V, small signal, and large signal characteristics of Freescalepsilas 48 V GaN HFET technology. Characterization of large signal performance for a 12.6 mm at 48 V drain bias shows 89 W output power with an associated power density of 7.1 W/mm, linear gain of 17.5 dB, and a power-added efficiency (PAE) of 62%. Analysis of channel temperature over drain bias shows that the maximum channel temperatures at 28 V and 48 V are 107 degC and 245 degC, respectively during saturated RF operation. Data for RF drift over time on a 16.2 mm device show less than 0.2 dB of RF drift for >1000 hrs. of testing. This level of RF performance represents a significant >4 dB gain and >2 W/mm power density improvement over Freescalepsilas previously reported GaN HFET technology.

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