Synthesis and Electrical Characteristic of P-type ZnO Film on Indium-Tin-Oxide Glass Substrate by Ultrasonic Spray Pyrolysis
Display R&D center, Southeast Univ., NanjingDOI: 10.1109/INEC.2008.4585502 Conference: Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Source: IEEE Xplore
This paper has present a transparent diode device fabricated by p and n type ZnO films using ultrasonic spray pyrolysis (USP) method. The ammonia is added to the solution to provide the N-source and the P type ZnO can be obtained. I-V curve for the transparent diode can be measured and the turn-on voltage of the diode device is 2.3V.
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