Conference Paper

Synthesis and Electrical Characteristic of P-type ZnO Film on Indium-Tin-Oxide Glass Substrate by Ultrasonic Spray Pyrolysis

Display R&D center, Southeast Univ., Nanjing
DOI: 10.1109/INEC.2008.4585502 Conference: Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Source: IEEE Xplore


This paper has present a transparent diode device fabricated by p and n type ZnO films using ultrasonic spray pyrolysis (USP) method. The ammonia is added to the solution to provide the N-source and the P type ZnO can be obtained. I-V curve for the transparent diode can be measured and the turn-on voltage of the diode device is 2.3V.

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    ABSTRACT: Nitrogen-doped p -type ZnO (ZnO:N) films have been achieved by ultrasonic spray pyrolysis at atmosphere. The high structural quality of the obtained films was confirmed by x-ray diffraction, scanning electron microscopy, and photoluminescence spectra. Hall-effect and Seebeck-effect measurements indicate that the obtained p -type ZnO film shows a low resistivity of 3.02×10<sup>-2</sup> Ω cm , high carrier concentration of 8.59×10<sup>18</sup> cm <sup>-3</sup> , high mobility of 24.1 cm <sup>2</sup>/ V s , and high Seebeck coefficient of 408.2 μ V / K at room temperature. Furthermore, the two-layer structured ZnO p–n homojunctions were prepared by depositing n -type ZnO layer on p -type ZnO:N layer. The current–voltage curve derived from the two-layer structure clearly shows the typical rectifying characteristic of p–n junctions.
    Applied Physics Letters 12/2004; 85(18-85):4070 - 4072. DOI:10.1063/1.1808229 · 3.30 Impact Factor
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    ABSTRACT: The two-layer-structured ZnO p-n homojunctions were prepared on single-crystal Si (100) substrate by depositing undoped n-type ZnO film on N–In codoped p-type ZnO film using ultrasonic spray pyrolysis. The crystal structure and morphology of the obtained ZnO homojunctions were examined by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The two-layer structure was confirmed by secondary ion mass spectroscopy depth profile analysis. The current–voltage (I–V) characteristics derived from the undoped ZnO/N–In codoped ZnO two-layer structure clearly show the rectifying characteristics of typical p-n junctions. © 2004 American Institute of Physics.
    Applied Physics Letters 04/2004; 84(19):3783-3785. DOI:10.1063/1.1739280 · 3.30 Impact Factor
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    ABSTRACT: Undoped and nitrogen doped ZnO films were deposited on Si substrates by ultrasonic spray pyrolysis at ambient atmosphere. The p type of conductivity for the nitrogen doped ZnO films has been observed. The concentration of free holes in ZnO films has been found to depend strongly on the resistivity of Si substrate. With decreasing of the substrate resistivity the concentration of free holes in ZnO films increases. The hole concentration of 1.1×1018 cm−3 and the hole mobility of 24 cm2 V−1 s−1 were observed in the ZnO films grown on the Si substrates with the resistivity of 0.001 Ω cm.
    Journal of Applied Physics 07/2006; 100(1):013704-013704-4. DOI:10.1063/1.2209773 · 2.18 Impact Factor