Conference Proceeding

A 1V CMOS low-noise amplifier with inductive resonated for 3.1–10.6GHz UWB wireless receiver

Dept. of Communication Engineering, National Chiao Tung University, Hsin-Chu, Taiwan
10/2007; DOI:10.1109/SOCC.2007.4545416 ISBN: 978-1-4244-1592-2 pp.15 - 18 In proceeding of: SOC Conference, 2007 IEEE International
Source: IEEE Xplore

ABSTRACT In this paper a low power and low-noise amplifier (LNA) is designed for ultra-wideband (UWB) system. The design consists of a wideband input impedance matching network, two stages common-source amplifier with inductive resonated load and an output buffer for measurement purpose; it is fabricated in TSMC 0.18um standard RF CMOS process. The measured UWB LNA gives 12.0dB gain and 8.0GHz 3dB bandwidth (3.0 – 11.0GHz) while consuming only 7.3mW through a 1.0V supply including the buffer. Over the 3.1 – 10.6GHz frequency band, a minimum noise figure of 4.2dB and input return loss lower than −8.7dB have been achieved.

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Keywords

8.0GHz 3dB bandwidth
 
buffer
 
inductive resonated load
 
input return loss lower
 
low power
 
low-noise amplifier
 
measurement purpose
 
output buffer
 
TSMC 0.18um standard RF CMOS process
 
ultra-wideband
 
wideband input impedance