Conference Paper

Low power sigma delta modulator with dynamic biasing for audio applications

Tamkang Univ., Taipei;
DOI: 10.1109/MWSCAS.2007.4488561 Conference: Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on
Source: IEEE Xplore

ABSTRACT In this paper, a low power sigma delta modulator with dynamic biasing technique is presented. According to the analysis of the operations of the switched-capacitor integrator, the folded-cascode operational amplifier can be designed with optimized biasing currents in three different phases to reduce power dissipations. The total power saving is 20% of the general one. A prototyping fourth order single-bit MASH 2-2 sigma delta modulator is designed with the technique of dynamic biasing to achieve dynamic range of 95 dB and peak signal-to-noise-and-distortion-ratio of 93 dB. The experimental circuit is designed in 0.35 mum 2P4M CMOS technology. The chip area is 3.11 mm2, and the power dissipation is only 5 mW from a supply voltage of 3 V.

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    ABSTRACT: Analog-to-digital converters provide a vital interface in mixed-signal electronic systems. One of the typical approaches to implement high-resolution sigma-delta modulators often involves the choice of high-order loop-filters, which imply the use of a large number of integrators. As in common topologies each integrator is implemented by one operational amplifier, high-order modulators can demand a high number of operational amplifiers, increasing the total circuit area and power consumption. In order to overcome this feature, a shared-opamp technique is explored in this work. It is a 4 th -order sigma-delta modulator, with the first stage being implemented by one op-amp, and the last 3 stages being shared by the same op-amp. This fact makes possible not only to reduce the total power consumption of the integrators, but also reduces the total number of op-amps by half, which lead to area reduction. Simulations results show a peak SNR of 100.1 dB and a THD of -80 dB were achieved for the audio band from 20 to 20 kHz, with a total power consumption of 9.83 mW, using the X- FAB 1.8 V CMOS 0.18 technology.